Researcher profile

T. B. Martins

T. B. Martins contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2011arXiv

Numerical Simulation of Magnetic Interactions in Polycrystalline YFeO3

The magnetic behavior of polycrystalline yttrium orthoferrite was studied from the experimental and theoretical points of view. Magnetization measurements up to 170 kOe were carried out on a single-phase YFeO3 sample synthesized from heterobimetallic alkoxides. The complex interplay between weak-ferromagnetic and antiferromagnetic interactions, observed in the experimental M(H) curves, was successfully simulated by locally minimizing the magnetic energy of two interacting Fe sublattices. The resulting values of exchange field (H_E = 5590 kOe), anisotropy field (H_A = 0.5 kOe) and Dzyaloshinsky-Moriya antisymmetric field (H_D = 149 kOe) are in good agreement with previous reports on this system.

preprint2009arXiv

Disorder-based graphene spintronics

The use of the spin of the electron as the ultimate logic bit - in what has been dubbed spintronics - can lead to a novel way of thinking about information flow. At the same time single layer graphene has been the subject of intense research due to both its fundamental properties as well as its potential application in nanoscale electronics. While defects can significantly alter the electronic properties of nanoscopic systems, the lack of control can lead to seemingly deleterious effects arising from the random arrangement of such impurities. Here we demonstrate, using {\it ab initio} density functional theory and non-equilibrium Green's functions calculations, that it is possible to obtain perfect spin selectivity in doped graphene nanoribbons to produce a perfect spin filter. We show that initially unpolarized electrons entering the system give rise to 100% polarization of the current due to random disorder. This effect is explained in terms of different localization lengths for each spin channel which together with the well know exponential dependence of the conductance on the length of the device leads to a new mechanism for the spin filtering effect that is enhanced by disorder.