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T. A. de Assis

T. A. de Assis contributes to research discovery and scholarly infrastructure.

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cond-mat.stat-mech cond-mat.mtrl-sci physics.comp-ph

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preprint2015arXiv

Dynamic scaling and temperature effects in thin film roughening

The dynamic scaling of mesoscopically thick films (up to $10^{4}$ atomic layers) grown with the Clarke-Vvedensky model is investigated numerically for broad ranges of values of the diffusion-to-deposition ratio $R$ and lateral neighbor detachment probability $ε$, but with no barrier at step edges. The global roughness scales with the film thickness $t$ as $W \sim t^β/\left[R^{3/2}\left(ε+ a\right)\right]$, where $β\approx 0.2$ is the growth exponent consistent with Villain-Lai-Das Sarma (VLDS) scaling and $a=0.025$. This general dependence on $R$ and $ε$ is inferred from renormalization studies and shows a remarkable effect of the former but a small effect of the latter, for $ε\leq 0.1$. For $R\geq {10}^4$, very smooth surfaces are always produced. The local roughness shows apparent anomalous scaling for very low temperatures ($R\leq {10}^2$), which is a consequence of large scaling corrections to asymptotic normal scaling. The scaling variable $R^{3/2}\left( ε+ a\right)$ also represents the temperature effects in the scaling of the correlation length and appears in the dynamic scaling relation of the local roughness, which gives dynamic exponent $z\approx 3.3$ also consistent with the VLDS class.

preprint2015arXiv

The role of Hurst exponent on cold field electron emission from conducting materials: from electric field distribution to Fowler-Nordheim plots

This work considers the effects of the Hurst exponent ($H$) on the local electric field distribution and the slope of the Fowler-Nordheim (FN) plot when considering the cold field electron emission properties of rough Large-Area Conducting Field Emitter Surfaces (LACFESs). A LACFES is represented by a self-affine Weierstrass-Mandelbrot function in a given spatial direction. For $0.1 \leqslant H < 0.5$, the local electric field distribution exhibits two clear exponential regimes. Moreover, a scaling between the macroscopic current density ($J_M$) and the characteristic kernel current density ($J_{kC}$), $J_{M} \sim [J_{kC}]^{β_{H}}$, with an H-dependent exponent $β_{H} > 1$, has been found. This feature, which is less pronounced (but not absent) in the range where more smooth surfaces have been found ($0.5 \leqslant H \leqslant 0.9$), is a consequence of the dependency between the area efficiency of emission of a LACFES and the macroscopic electric field, which is often neglected in the interpretation of cold field electron emission experiments. Considering the recent developments in orthodox field emission theory, we show that the exponent $β_{H}$ must be considered when calculating the slope characterization parameter (SCP) and thus provides a relevant method of more precisely extracting the characteristic field enhancement factor from the slope of the FN plot.

preprint2014arXiv

Height distribution of equipotential lines in a region confined by a rough conducting boundary

This work considers the behavior of the height distributions of the equipotential lines in a region confined by two interfaces: a cathode with an irregular interface and a distant flat anode. Both boundaries, which are maintained at distinct and constant potential values, are assumed to be conductors. The morphology of the cathode interface results from the deposit of $2 \times 10^{4}$ monolayers that are produced using a single competitive growth model based on the rules of the Restricted Solid on Solid and Ballistic Deposition models, both of which belong to the Kadar-Parisi-Zhang (KPZ) universality class. At each time step, these rules are selected with probability $p$ and $q = 1 - p$. For several irregular profiles that depend on $p$, a family of equipotential lines is evaluated. The lines are characterized by the skewness and kurtosis of the height distribution. The results indicate that the skewness of the equipotential line increases when they approach the flat anode, and this increase has a non-trivial convergence to a delta distribution that characterizes the equipotential line in a uniform electric field. The morphology of the equipotential lines is discussed; the discussion emphasizes their features for different ranges of $p$ that correspond to positive, null and negative values of the coefficient of the non-linear term in the KPZ equation.

preprint2014arXiv

Relaxation after a change in the interface growth dynamics

The global effects of sudden changes in the interface growth dynamics are studied using models of the Edwards-Wilkinson (EW) and Kardar-Parisi-Zhang (KPZ) classes during their growth regimes in dimensions $d=1$ and $d=2$. Scaling arguments and simulation results are combined to predict the relaxation of the difference in the roughness of the perturbed and the unperturbed interfaces, $ΔW^2 \sim s^c t^{-γ}$, where $s$ is the time of the change and $t>s$ is the observation time after that event. The previous analytical solution for the EW-EW changes is reviewed and numerically discussed in the context of lattice models, with possible decays with $γ=3/2$ and $γ=1/2$. Assuming the dominant contribution to $ΔW^2$ to be predicted from a time shift in the final growth dynamics, the scaling of KPZ-KPZ changes with $γ= 1-2β$ and $c=2β$ is predicted, where $β$ is the growth exponent. Good agreement with simulation results in $d=1$ and $d=2$ is observed. A relation with the relaxation of a local autoresponse function in $d=1$ cannot be discarded, but very different exponents are shown in $d=2$. We also consider changes between different dynamics, with the KPZ-EW as a special case in which a faster growth, with dynamical exponent $z_i$, changes to a slower one, with exponent $z$. A scaling approach predicts a crossover time $t_c\sim s^{z/z_i}\gg s$ and $ΔW^2 \sim s^c F\left( t/t_c\right)$, with the decay exponent $γ=1/2$ of the EW class. This rules out the simplified time shift hypothesis in $d=2$ dimensions. These results help to understand the remarkable differences in EW smoothing of correlated and uncorrelated surfaces, and the approach may be extended to sudden changes between other growth dynamics.

preprint2013arXiv

Thin film deposition with time varying temperature

We study the effects of time-dependent substrate/film temperature in the deposition of a mesoscopically thick film using a statistical model that accounts for diffusion of adatoms without lateral neighbors whose coefficients depend on an activation energy and temperature. Dynamic scaling with fixed temperature is extended to predict conditions in which the temperature variation significantly affects surface roughness scaling. It agrees with computer simulation results for deposition of up to ${10}^4$ atomic layers and maximal temperature changes of $30 K$, near or below the room temperature. If the temperature decreases during the growth, the global roughness may have a rapid growth, with effective exponents larger than 1/2 due to the time-decreasing adatom mobility. The local roughness in small box size shows typical evidence of anomalous scaling, with anomaly exponents depending on the particular form of temperature decrease. If the temperature increases during the growth, a non-monotonic evolution of the global roughness may be observed, which is explained by the competition of kinetic roughening and the smoothing effect of increasing diffusion lengths. The extension of the theoretical approach to film deposition with other activation energy barriers shows that similar conditions on temperature variation may lead to the same morphological features. Equivalent results may also be observed by controlling the deposition flux.