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T. A. Abinandanan

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Published work

2 published item(s)

preprint2016arXiv

Growth in multi-component alloys: Theoretical and numerical determination of phase concentrations

Understanding the role of solute diffusivities in equilibrium tie-line selection during growth of a second phase in ternary and higher multicomponent two phase alloys is an important problem due to the strong dependence of mechanical properties on compositions. In this paper, we derive analytical expressions for predicting tie-lines and composition profiles in the matrix during growth of planar and cylindrical precipitates with the assumption of diagonal diffusivity matrices. We confirm our calculations by sharp interface and phase field simulations. The numerical techniques are in turn utilized for investigating the role of off-diagonal entries in the diffusivity matrix. In addition, the sharp interface methods allow for the tracking of the tie-line compositions during growth of 2D precipitates which contribute to an understanding of the change in equilibrium tie-lines chosen by the system during growth.

preprint2013arXiv

Effect of Epitaxial Strain on Phase Separation in Thin Films

We examine the role of an imposed epitaxial strain e in enhancing or depressing the spinodal instability of an alloy thin film. Since the alloy film starts with an imposed strain, phase separation offers a mechanism to relieve it, but only when the film is elastically inhomogeneous. With composition-dependence of elastic modulus given by y, and that of lattice parameter by η, our simulations using the Cahn-Hilliard model show (and analytical results for early stages confirm) that, for (ey/η) > 0, the imposed strain adds to the driving force for phase separation, decreases the maximally growing wave length, and expands the coherent spinodal in the phase diagram. Further, when (ey/η) > 0.372, it expands to even outside of chemical spinodal. Phase separation produces islands of elastically softer (harder) phase with (without) a favorable imposed strain. These results are in agreement with experimental results in GeSi thin films on Si and Ge substrates, as well as in InGaAs films on GaAs substrates.