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Syed Farid Uddin Farhad

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Published work

2 published item(s)

preprint2022arXiv

Facile synthesis of Cu2O nanorods in the presence of NaCl by SILAR method and its characterizations

Cu2O nanorods have been deposited on soda-lime glass (SLG) substrates by the modified SILAR technique by varying the concentration of NaCl electrolyte into the precursor complex solution. The structural, electrical, and optical properties of synthesized Cu2O nanorod films have been studied by a variety of characterization tools. Structural analyses by XRD confirmed the polycrystalline Cu2O phase with (111) preferential growth. Raman scattering spectroscopic measurements conducted at room temperature also showed characteristic peaks of the pure Cu2O phase. The surface resistivity of the Cu2O nanorod films decreased from 15,142 to 685 Ohm.cm with the addition of NaCl from 0 to 4 mmol, and then exhibited an opposite trend with further addition of NaCl. The optical bandgap of the synthesized Cu2O nanorod films was observed as 1.88 - 2.36 eV, while the temperature-dependent activation energies of the Cu2O films were measured as about 0.14 - 0.21 eV. SEM morphologies demonstrated Cu2O nanorod as well as closely packed spherical grains with the alteration of NaCl concentration. The Cu2O phase of nanorods was found stable up to 230 0C corroborating the optical bandgap results of the same. The film fabricated in presence of 4 mmol of NaCl showed the lowest resistivity and activation energy as well comparatively uniform nanorod morphology. Our studies demonstrate that the nominal presence of NaCl electrolytes in the pre-cursor solutions has a significant impact on the physical properties of Cu2O nanorod films which could be beneficial in optoelectronic research.

preprint2020arXiv

Pulsed laser deposition of single phase n- and p-type Cu2O thin films with low resistivity

Low resistivity (~3-24 mOhm.cm) with tunable n- and p-type phase pure Cu2O thin films have been grown by pulsed laser deposition at 25-200 0C by varying the background oxygen partial pressure (O2pp). Capacitance data obtained by electrochemical impedance spectroscopy was used to determine the conductivity (n- or p-type), carrier density, and flat band potentials for samples grown on indium tin oxide (ITO) at 25 0C. The Hall mobility of the n- and p-type Cu2O was estimated to be ~ 0.85 cm2.V-1s-1 and ~ 4.78 cm2.V-1s-1 respectively for samples grown on quartz substrate at 25 0C. An elevated substrate temperature ~ 200 0C with O2pp = 2 - 3 mTorr yielded p-type Cu2O films with six orders of magnitude higher resistivities in the range ~ 9 - 49 kOhm.cm and mobilities in the range ~ 13.5 - 22.2 cm2.V-1s-1. UV-Vis-NIR diffuse reflectance spectroscopy showed optical bandgaps of Cu2O films in the range of 1.76 to 2.15 eV depending on O2pp. Thin films grown at oxygen-rich conditions O2pp > 7 mTorr yielded mixed-phase copper oxide irrespective of the substrate temperatures and upon air annealing at 550 0C for 1 hour completely converted to CuO phase with n-type semiconducting properties (~12 Ohm.cm, ~1.50 cm2.V-1s-1). The as-grown p- and n-type Cu2O showed rectification and a photovoltaic (PV) response in solid junctions with n-ZnO and p-Si electrodes respectively. Our findings may create new opportunities for devising Cu2O based junctions requiring low process temperatures.