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Svetlana Gurevich

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physics.flu-dyn nlin.PS

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preprint2022arXiv

Multiscale perspective on wetting on switchable substrates: mapping between microscopic and mesoscopic models

To understand the non-equilibrium relaxation dynamics of a liquid droplet on a switchable substrate the interplay of different length- and time-scales needs to be understood. We present a method to map the microscopic information, resulting from a molecular dynamics simulation, to a mesoscopic scale, reflected by a thin film model. After a discussion of the mapping procedure we first analyze the relaxation of a liquid droplet upon switching the wettability of the substrate. Further, we show that a nearly identical mapping procedure can be used for the description of two coalescing droplets. With our procedure we take a first step to extend the mapping from the equilibrium case to non-equilibrium wetting dynamics, thus allowing for a quantitative multi-scale analysis.

preprint2022arXiv

Wetting dynamics under periodic switching on different scales: Characterization and mechanisms

The development of substrates with a switchable wettability is on a fast pace. The limit of switching frequencies and contact angle differences between substrate states are steadily pushed further. We investigate the behavior of a droplet on a homogeneous substrate, which is switched between two wettabilities for a large range of switching frequencies. Here, we are particularly interested in the dependence of the wetting behavior on the switching frequency. We show, that results obtained on the particle level via molecular dynamics simulations and on the continuum level via the thin-film model are consistent. Predictions of simple models as the molecular theory of wetting (MKT) and analytical calculations based on the MKT also show good agreement and offer deeper insights into the underlying mechanisms.

preprint2020arXiv

Bifurcations of front motion in passive and active Allen-Cahn-type equations

The well-known cubic Allen-Cahn (AC) equation is a simple gradient dynamics (or variational) model for a nonconserved order parameter field. After revising main literature results for the occuring different types of moving fronts, we employ path continuation to determine their bifurcation diagram in dependence of the external field strength or chemical potential. We then employ the same methodology to systematically analyse fronts for more involved AC-type models. In particular, we consider a cubic-quintic variational AC model and two different nonvariational generalisations. We determine and compare the bifurcation diagrams of front solutions in the four considered models.

preprint2015arXiv

Localized structures in broad area VCSELs: experiments and delay-induced motion

{We investigate the space-time dynamics of a Vertical-Cavity Surface-Emitting Laser (VCSEL) subject to optical injection and to delay feedback control. Apart from their technological advantages, broad area VCSELs allow creating localized light structures (LSs). Such LSs, often called Cavity Solitons, have been proposed to be used in information processing, device characterization, and others. After a brief description of the experimental setup, we present experimental evidence of stationary LSs. We then theoretically describe this system using a mean field model. We perform a real order parameter description close to the nascent bistability and close to large wavelength pattern forming regime. We theoretically characterize the LS snaking bifurcation diagram in this framework. The main body of this chapter is devoted to theoretical investigations on the time-delayed feedback control of LSs in VCSELs. The feedback induces a spontaneous motion of the LSs, which we characterize by computing the velocity and the threshold associated with such motion. In the nascent bistability regime, the motion threshold and the velocity of moving LSs depend only on the feedback parameters. However, when considering the previously introduced mean-field model, theoretical predictions indicate that both motion threshold and velocity are strongly affected by the phase of the delay and by the carrier relaxation rate.