Researcher profile

Susan Trolier-McKinstry

Susan Trolier-McKinstry contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Automated Experiments of Local Non-linear Behavior in Ferroelectric Materials

We develop and implement an automated experiment in multimodal imaging to probe structural, chemical, and functional behaviors in complex materials and elucidate the dominant physical mechanisms that control device function. Here the emergence of non-linear electromechanical responses in piezoresponse force microscopy (PFM) is explored. Non-linear responses in PFM can originate from multiple mechanisms, including intrinsic material responses often controlled by domain structure, surface topography that affects the mechanical phenomena at the tip-surface junction, and, potentially, the presence of surface contaminants. Using an automated experiment to probe the origins of non-linear behavior in model ferroelectric lead titanate (PTO) and ferroelectric Al0.93B0.07N films, it was found that PTO showed asymmetric nonlinear behavior across a/c domain walls and a broadened high nonlinear response region around c/c domain walls. In contrast, for Al0.93B0.07N, well-poled regions showed high linear piezoelectric responses paired with low non-linear responses and regions that were multidomain indicated low linear responses and high nonlinear responses. We show that formulating dissimilar exploration strategies in deep kernel learning as alternative hypotheses allows for establishing the preponderant physical mechanisms behind the non-linear behaviors, suggesting that this approach automated experiments can potentially discern between competing physical mechanisms. This technique can also be extended to electron, probe, and chemical imaging.

preprint2022arXiv

Unique Ferroelectric Fatigue Behavior and Exceptional High Temperature Retention in Al0.93B0.07N Films

This paper reports the fatigue and retention behavior for Al1-xBxN thin films, a member of the novel family of wurtzite ferroelectrics, with an emphasis on the role of capacitor architecture. By modifying the capacitor architecture, and thus thermal and electrical boundary conditions, we create insight regarding the relative importance of intrinsic and extrinsic contributors to the degradation tendencies. Our experiments suggest that bipolar cycling of metal (Pt/W)/Al0.93B0.07N/W/Al2O3 film stacks first induced wake-up, then a region of constant switchable polarization. On additional cycling, the film leakage current increased, and then films underwent dielectric breakdown. For unpatterned first generation Al0.93B0.07N films with 100 nm thick Pt top electrodes survive ~104 bipolar cycles, whereas films with 1000 nm W top electrodes survive ~10^5 cycles before thermal dielectric breakdown. Sentaurus modeling was used to design an SU8 field plate which improved the performance to ~10^6 fatigue cycles. It was found that the thermal failures during fatigue were not due to surface flashover events but were associated with hard breakdown events in the dielectric. The films showed excellent retention of the stored polarization state. As expected, data retention was slightly inferior in the opposite state (OS) measurements. However, it is noted that even after 3.6x10^6 sec (1000 hr). at 200°C, the OS signal margin still exceeded 200 uC/cm2. The predicted OS retention is 82% after 10 years baking at 200oC.

preprint2020arXiv

Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.