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Sunil K. Karna

Sunil K. Karna appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2021arXiv

Annihilation and Control of Chiral Domain Walls with Magnetic Fields

The control of domain walls is central to nearly all magnetic technologies, particularly for information storage and spintronics. Creative attempts to increase storage density need to overcome volatility due to thermal fluctuations of nanoscopic domains and heating limitations. Topological defects, such as solitons, skyrmions, and merons, may be much less susceptible to fluctuations, owing to topological constraints, while also being controllable with low current densities. Here, we present the first evidence for soliton/soliton and soliton/antisoliton domain walls in the hexagonal chiral magnet Mn1/3NbS2 that respond asymmetrically to magnetic fields and exhibit pair-annihilation. This is important because it suggests the possibility of controlling the occurrence of soliton pairs and the use of small fields or small currents to control nanoscopic magnetic domains. Specifically, our data suggest that either soliton/soliton or soliton/antisoliton pairs can be stabilized by tuning the balance between intrinsic exchange interactions and long-range magnetostatics in restricted geometries

preprint2020arXiv

Helical magnetic order and Fermi surface nesting in non-centrosymmetric ScFeGe

An investigation of the structural, magnetic, thermodynamic, and charge transport properties of non-centrosymmetric hexagonal ScFeGe reveals it to be an anisotropic metal with a transition to a weak itinerant incommensurate helimagnetic state below $T_N = 36$ K. Neutron diffraction measurements discovered a temperature and field independent helical wavevector \textbf{\textit{k}} = (0 0 0.193) with magnetic moments of 0.53 $μ_{B}$ per formula unit confined to the {\it ab}-plane. Density functional theory calculations are consistent with these measurements and find several bands that cross the Fermi level along the {\it c}-axis with a nearly degenerate set of flat bands just above the Fermi energy. The anisotropy found in the electrical transport is reflected in the calculated Fermi surface, which consists of several warped flat sheets along the $c$-axis with two regions of significant nesting, one of which has a wavevector that closely matches that found in the neutron diffraction. The electronic structure calculations, along with a strong anomaly in the {\it c}-axis conductivity at $T_N$, signal a Fermi surface driven magnetic transition, similar to that found in spin density wave materials. Magnetic fields applied in the {\it ab}-plane result in a metamagnetic transition with a threshold field of $\approx$ 6.7 T along with a sharp, strongly temperature dependent, discontinuity and a change in sign of the magnetoresistance for in-plane currents. Thus, ScFeGe is an ideal system to investigate the effect of in-plane magnetic fields on an easy-plane magnetic system, where the relative strength of the magnetic interactions and anisotropies determine the topology and magnetic structure.

preprint2013arXiv

Optical and Electrical Characterization of Boron-Doped Diamond

The boron-doped single crystal diamond films were grown homoepitaxially on synthetic (100) oriented Type Ib diamond substrates using a Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Raman spectrum showed a few additional bands at the lower wavenumber regions along with the zone center optical phonon mode for diamond. The change in the peak profile of the zone center optical phonon mode and its downshift were observed with the increasing boron content in the film. A modification in surface morphology of the film with increasing boron content had been observed by atomic force microscopy. Four point probe electrical measurement indicated that different conduction mechanisms are operating in various temperature regions for these semiconducting films.