Researcher profile

Subhash Mahajan

Subhash Mahajan contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Disconnection-mediated twin embryo growth in Mg

While deformation twinning in hexagonal close-packed metals has been widely studied due to its substantial impact on mechanical properties, an understanding of the detailed atomic processes associated with twin embryo growth is still lacking. Conducting molecular dynamics simulations on Mg, we show that the propagation of twinning disconnections emitted by basal-prismatic interfaces controls the twin boundary motion and is the rate-limiting mechanism during the initial growth of the twin embryo. The time needed for disconnection propagation is related to the distance between the twin tips, with widely spaced twin tips requiring more time for a unit twin boundary migration event to be completed. Thus, a phenomenological model, which unifies the two processes of disconnection and twin tip propagation, is proposed here to provide a quantitative analysis of twin embryo growth. The model fits the simulation data well, with two key parameters (twin tip velocity and twinning disconnection velocity) being extracted. In addition, a linear relationship between the ratio of twinning disconnection velocity to twin tip velocity and the applied shear stress is observed. Using an example of twin growth in a nanoscale single crystal from the recent literature, we find that our molecular dynamics simulations and analytical model are in good agreement with experimental data.

preprint2020arXiv

Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures

Comprehensive investigations on ZnSe/GaAs and GaAs/ZnSe interfaces were carried out by photoluminescence (PL) and transmission electron microscopy (TEM), as a part of realizing high quality ZnSe-GaAs (100) hetero-valent structures (HS). The nature of ZnSe/GaAs interface under different surface terminations of GaAs was examined. The ZnSe/Ga-terminated GaAs was found to have a superior optical and microstructural quality, with a chemical interface consisting of a mixture of both the GaAs and ZnSe atomic constituents. For GaAs/ZnSe interface studies, a low-temperature migration enhanced epitaxy (LT-MEE) growth technique was used to grow GaAs layers under the conditions compatible to the growth of ZnSe. Both Ga and As-initialized LT-MEE GaAs/ZnSe interfaces were investigated. A defective transition layer was observed along the As-initialized GaAs/ZnSe interface, which may be attributed to the formation Zn$_3$As$_2$ compound. The correlation between the observed optical as well as structural properties of both the (GaAs/ZnSe and ZnSe/GaAs) interfaces and the growth conditions used in this study are discussed in detail. This study could provide a valuable insight on the interface nature of ZnSe-GaAs HS.