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Researcher profile

Subhankar Bedanta

Subhankar Bedanta contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

15 published item(s)

preprint2025arXiv

Thermal Evolution of Skyrmions in Synthetic Ferrimagnets of Co/Gd Heterostructure for Topological Spintronic Applications

Synthetic ferrimagnetic (SFiM) multilayers offer a versatile platform for hosting skyrmions with tunable magnetic properties, combining the advantages of ferromagnets and antiferromagnets. Unlike synthetic antiferromagnets, SFiMs retain a finite magnetization that allows direct observation of magnetic textures while still benefiting from reduced dipolar fields and a suppressed skyrmion Hall effect. However, a systematic investigation of their temperature and field dependent magnetization evolution, including the labyrinthine-to-skyrmion transition in Co/Gd-based SFiMs, remains less explored. Here, we demonstrate the stabilization of 70 nm-radius skyrmions at room temperature and reveal how the Co and Gd sublattices influence the temperature-dependent net magnetization. Further, we develop a microscopic spin model for SFiM incorporating the relevant magnetic interactions, which reproduces the experimental observations and captures the temperature-dependent magnetic phase evolution. This framework highlights the interplay of fundamental interactions controlling skyrmion stability in SFiM and provides a pathway for engineering heterostructures for topological spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Molecular Hybridization Induced Antidamping and Sizable Enhanced Spin-to-Charge Conversion in Co20Fe60B20/$β$-W/C60 Heterostructures

Development of power efficient spintronics devices has been the compelling need in the post-CMOS technology era. The effective tunability of spin-orbit-coupling (SOC) in bulk and at the interfaces of hybrid materials stacking is a prerequisite for scaling down the dimension and power consumption of these devices. In this work, we demonstrate the strong chemisorption of C60 molecules when grown on the high SOC $β$-W layer. The parent CFB/$β$-W bilayer exhibits large spin-to-charge interconversion efficiency, which can be ascribed to the interfacial SOC observed at the Ferromagnet/Heavy metal interface. Further, the adsorption of C60 molecules on $β$-W reduces the effective Gilbert damping by $\sim$15% in the CFB/$β$-W/C60 heterostructures. The anti-damping is accompanied by a gigantic $\sim$115% enhancement in the spin-pumping induced output voltage owing to the molecular hybridization. The non-collinear Density Functional Theory calculations confirm the long-range enhancement of SOC of $β$-W upon the chemisorption of C60 molecules, which in turn can also enhance the SOC at the CFB/$β$-W interface in CFB/$β$-W/C60 heterostructures. The combined amplification of bulk as well interfacial SOC upon molecular hybridization stabilizes the anti-damping and enhanced spin-to-charge conversion, which can pave the way for the fabrication of power efficient spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Spinterface Mediated Magnetic Properties of Co20Fe60B20/Alq3 Heterostructures

Organic semiconductors (OSCs) are suitable materials for spintronics applications as they form a spinterface when placed next to a ferromagnet, which in turn leads to novel functionalities. The evolution of spinterface can tune the global magnetic anisotropy, magnetization reversal, magnetization dynamics, etc. Planar tris-(8-hydroxyquinoline)aluminum (Alq3) OSC has shown tremendous potential for spintronics applications, thanks to its efficient spin-polarized current transport ability. Here, we establish the spinterface when the Alq3 molecules are deposited on amorphous ferromagnet Co20Fe60B20(CFB). The $π$-d hybridization in CFB/Alq3 enhances the coercive field and significantly modifies the shape and size of the magnetic domains. A $\sim$100% increase in uniaxial anisotropic energies and a reduction in magnetic damping are also evident owing to the strong interfacial hybridization.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Structural deformation and irreversible magnetic properties of flexible Co/Pt and Co/Pd thin films

The successful commercialization of flexible spintronic devices requires a complete understanding of the impact of external strain on the structural, electronic, and magnetic properties of a system. The impact of bending-induced strain on flexible films is studied quite well. However, little is known about the effect of other modes of flexibility, e.g., wrinkling, twisting, peeling, and stretching on the functional properties of flexible films. In this context, perpendicular magnetic anisotropic Co/Pt and Co/Pd thin films are prepared on flexible Kapton substrates, and the impact of the peeling mode is studied in detail. The peeling method generates numerous cracks, and buckling in the thin film, along with localized blister formation imaged by scanning electron microscopy. Further, the resistivity measurement confirms a significant enhancement in sample resistance owing to the severe damage of the films. The structural discontinuities strongly affect the magnetization reversal phenomena as measured by the magneto-optic Kerr effect (MOKE)-based microscopy. The bubble domains got converted to elongated-shaped domains due to several hindrances to the wall motion after strain application. Further, the relaxation measurements reveal that the thermal energy is insufficient to switch the magnetization at a few areas due to their high pinning potential associated with the damages. In contrast to bending-induced strain, here, all the modifications in the functional properties are found to be irreversible in nature.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetization reversal and domain structures in perpendicular synthetic antiferromagnets prepared on rigid and flexible substrates

Ferromagnetic (FM) layers separated by nonmagnetic metallic spacer layers can exhibit Ruderman Kittel Kasuya Yosida (RKKY) coupling which may lead to a stable synthetic antiferromagnetic (SAF) phase. In this article we study magnetization reversal in [Co/Pt] layers by varying the number of bilayer stacks (Pt/Co) as well as thickness of Ir space layer tIr on rigid Si(100) and flexible polyimide substrates. The samples with tIr = 1.0 nm shows a FM coupling whereas samples with tIr = 1.5 nm shows an AFM coupling between the FM layers. At tIr = 2.0 nm, it shows a bow-tie shaped hysteresis loop indicating a canting of magnetization at the reversal. Higher anisotropy energy as compared to the interlayer exchange coupling (IEC) energy is an indication of the smaller relative angle between the magnetization of lower and upper FM layers. We have also demonstrated the strain induced modification of IEC as well as magnetization reversal phenomena. The IEC shows a slight decrease upon application of compressive strain and increase upon application of tensile strain which indicates the potential of SAFs in flexible spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Magnetoelastic anisotropy in Heusler-type Mn$_{2-δ}$CoGa$_{1+δ}$ films

Perpendicular magnetization is essential for high-density memory application using magnetic materials. High-spin polarization of conduction electrons is also required for realizing large electric signals from spin-dependent transport phenomena. Heusler alloy is a well-known material class showing the half-metallic electronic structure. However, its cubic lattice nature favors in-plane magnetization and thus minimizes the perpendicular magnetic anisotropy (PMA), in general. This study focuses on an inverse-type Heusler alloy, Mn$_{2-δ}$CoGa$_{1+δ}$ (MCG) with a small off-stoichiometry ($δ$) , which is expected to be a half-metallic material. We observed relatively large uniaxial magnetocrystalline anisotropy constant ($K_\mathrm{u}$) of the order of 10$^5$ J/m$^3$ at room temperature in MCG films with a small tetragonal distortion of a few percent. A positive correlation was confirmed between the $c/a$ ratio of lattice constants and $K_\mathrm{u}$. Imaging of magnetic domains using Kerr microscopy clearly demonstrated a change in the domain patterns along with $K_\mathrm{u}$. X-ray magnetic circular dichroism (XMCD) was employed using synchrotron radiation soft x-ray beam to get insight into the origin for PMA. Negligible angular variation of orbital magnetic moment ($Δm_\mathrm{orb}$) evaluated using the XMCD spectra suggested a minor role of the so-called Bruno's term to $K_\mathrm{u}$. Our first principles calculation reasonably explained the small $Δm_\mathrm{orb}$ and the positive correlation between the $c/a$ ratio and $K_\mathrm{u}$. The origin of the magnetocrystalline anisotropy was discussed based on the second-order perturbation theory in terms of the spin--orbit coupling, claiming that the mixing of the occupied $\uparrow$- and the unoccupied $\downarrow$-spin states is responsible for the PMA of the MCG films.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of random anisotropy in stabilization of topological chiral textures

Ever increasing demand of skyrmion manipulation in nanodevices has brought up interesting research to 8 understand the stabilization of these topologically protected chiral structures. To understand the actual shape 9 and size of skyrmion observed experimentally, we have performed micromagnetic simulations to investigate 10 skyrmion stabilization in presence of random anisotropy in magnetic thin film system. Previous experimental 11 reports of skyrmion imaging in thin films depicts that the skyrmion shape is not perfectly circular. Here we 12 show via simulations that the shape of a skyrmion can get distorted due to the presence of different local 13 anisotropy energy. The values of uniaxial anisotropy constant (Ku) and random aniostropy constant (Kr) 14 are varied to understand the change in shape and size of a skyrmion and an antiskyrmion stabilized in a 15 square magnetic nanoelement. The skyrmion shape gets distorted and the size gets constant for high random 16 anisotropy energy in the system.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large spin Hall angle and spin mixing conductance in highly resistive antiferromagnetic Mn2Au

Antiferromagnetic (AFM) materials recently have shown interest in the research in spintronics due to its zero stray magnetic field, high anisotropy, and spin orbit coupling. In this context, the bi-metallic AFM Mn2Au has drawn attention because it exhibits unique properties and its Neel temperature is very high. Here, we report spin pumping and inverse spin Hall effect investigations in Mn2Au and CoFeB bilayer system using ferromagnetic resonance. We found large spin Hall angle θ_SH = 0.22

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Simultaneous observation of anti-damping and inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayer system

Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayers which are prepared by oxide molecular beam epitaxy. The damping coefficient ($α$) of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO) single layer is found to be 0.0104. However the LSMO/Pt bilayers exhibit decrease in $α$ with increase in Pt thickness. This decrease in the value of $α$ is probably due to high anti-damping like torque. Further, we have investigated the angle dependent inverse spin Hall effect (ISHE) to quantify the spin pumping voltage from other spin rectification effects such as anomalous Hall effect and anisotropic magnetoresistance. We have observed high spin pumping voltage ($\sim$~20 $ μV$). The results indicate that both anti-damping and spin pumping phenomena are occuring simultaneously.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Skyrmion Racetrack memory with an antidot

Skyrmion racetrack memory has a lots of potential in future non-volatile solid state devices. In general such devices require current to nucleate skyrmions via spin transfer torque (STT) effect. Further the current is also required to drive the skyrmions in the nanowire device. However the current applied during nucleation of successive skyrmions may have unwanted perturbation \emph{viz.} Joule heating and skyrmion Hall effect, on the propagation of previously generated skyrmions. Therefore new methodology is required to decouple the generation and propagation of skyrmions. Here we present a novel route via micromagnetic simulation for generation of skyrmions from triangular antidot structure in a ferromagnetic nanotrack using local oersted field. Antidots are holes in a magnetic nanoelement. Controlled skyrmion injection can be achieved by tuning the dimensions of the antidots that are placed at either end of the nanotrack. Multiple skyrmions can be simultaneously generated by incorporating more number of antidots. Here we propose a novel design to realise skyrmionic racetrcak memory where one can individually generate and manipulate the skyrmions within the nanotrack.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin pumping and inverse spin Hall effect in iridium oxide

Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators, antiferromagnets are usually considered because they exhibit high spin-orbit coupling (SOC). In addition to the above materials, 5d transition metal oxide e.g. Iridium Oxide (IrO 2 ) is a potential candidate which exhibits high SOC strength. Here we report a study of spin pumping and inverse spin Hall effect (ISHE), via ferromagnetic resonance (FMR), in IrO 2 /CoFeB system. We identify the individual contribution of spin pumping and other spin rectification effects in the magnetic layer, by investigating the in-plane angular dependence of ISHE signal. Our analysis shows significant contribution of spin pumping effect to the ISHE signal. We show that polycrystalline IrO 2 thin film exhibits high spin Hall conductivity and spin Hall angle which are comparable to the values of Pt.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain engineered domain structure and their relaxation in perpendicularly magnetized Co/Pt deposited on flexible polyimide

The demand of fast and power efficient spintronics devices with flexibility requires additional energy for magnetization manipulation. Stress/and strain have shown their potentials for tuning magnetic properties to the desired level. Here, we report a systematic study for the effect of both tensile and compressive stresses on the magnetic anisotropy (MA). Further the effect of stress on the domain structure and magnetization relaxation mechanism in a perpendicularly magnetized Co/Pt film has been studied. It is observed that a minimal in-plane tensile strain has increased the coercivity of the film by 38$\%$ of its initial value, while a very small change of coercivity has been found under compressive strain. The size of ferromagnetic domains decreases under tensile strain, while no change is observed under the compressive strain. Magnetization relxation measured at sub-coercive fields yields longer relaxation time in the strained state.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Study of magnetic interface and its effect in Fe/NiFe bilayers of alternating order

We present a comprehensive study on the magnetization reversal in Fe/NiFe bilayer system by alternating the order of the magnetic layers. All the samples show growth-induced uniaxial magnetic anisotropy due to oblique angle deposition technique. Strong interfacial exchange coupling between the Fe and NiFe layers leads to the single-phase hysteresis loops in the bilayer system. The strength of coupling being dependent on the interface changes upon alternating the order of magnetic layers. The magnetic parameters such as coercivity HC, and anisotropy field HK become almost doubled when NiFe layer is grown over the Fe layers. This enhancement in the magnetic parameters is primarily dependent on the increase of the thickness and magnetic moment of Fe-NiFe interfacial layer as revealed from the polarized neutron reectivity (PNR) data of the bilayer samples. The difference in the thickness and magnetization of the Fe-NiFe interfacial layer indicates the modification of the microstructure by alternating the order of the magnetic layers of the bilayers. The interfacial magnetic moment increased by almost 18 % when NiFe layer is grown over the Fe layer. In spite of the different values of anisotropy fields and modified interfacial exchange coupling, the Gilbert damping constant values of the ferromagnetic bilayers remain similar to single NiFe layer.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enhanced anisotropy and study of magnetization reversal in Co/C60 bilayer thin film

The interface between organic semiconductor [OSC]/ferromagnetic [FM] material can exhibit ferromagnetism due to their orbital hybridization. Charge/spin transfer may occur from FM to OSC layer leading to the formation of `spinterface' i.e. the interface exhibiting a finite magnetic moment. In this work, the magnetic properties of Co/C$_{60}$ bilayer thin film have been studied to probe the interface between Co and C$_{60}$ layer. Polarized neutron reflectivity [PNR] measurement indicates that the thickness and moment of the spinterface are $\sim$ 2 $\pm$ 0.18 nm and 0.8 $\pm$ 0.2 $μ_B$/cage, respectively. The comparison of the magnetization reversal between the Co/C$_{60}$ bilayer and the parent single layer Co thin film reveals that spinterface modifies the domain microstructure. Further, the anisotropy of the bilayer system shows a significant enhancement ($\sim$ two times) in comparison to its single layer counterpart which is probably due to an additional interfacial anisotropy arising from the orbital hybridization at the Co/C$_{60}$ interface.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Exchange bias in Fe/Ir20Mn80 bilayers: Role of spin-glass like interface and bulk antiferromagnet spins

We have performed magnetic measurements like temperature (T), cooling field (HFC) dependence of exchange bias (EB) and training effect to investigate the magnetic nature of the interface of the Fe/Ir20Mn80 systems. Thin film bilayer samples of different thicknesses of Ir20Mn80 have been prepared by dc magnetron sputtering at room temperature. The variation of exchange bias field (HEB) with the increase in thickness of Ir20Mn80 predicts the antiferromagnet (AFM) bulk spins contribution to EB. Exponential decay of HEB and coercive field (HC) with temperature reveals the presence of spin glass (SG) like interface. Also, the decrease of HEB with increasing HFC confirms the SG like frustration at the interface. Further, the fitting of training effect experimental data envisages the presence of frozen and rotatable spins at the magnetically frustrated interface of these EB systems.

0 citations0 reviewsNo code linkedOpen access