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Researcher profile

Steven S. -L. Zhang

Steven S. -L. Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2022arXiv

Spin anomalous-Hall unidirectional magnetoresistance

We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal layer$-$in stark contrast to the well-studied unidirectional spin-Hall magnetoresistance$-$but, instead, arises from the spin anomalous Hall effect in the ferromagnetic layer. Physically, it is the charge-spin conversion induced by the spin anomalous Hall effect that conspires with the structural inversion asymmetry to generate a net nonequilibrium spin density in the ferromagnetic layer, which, in turn, modulates the resistance of the bilayer when the direction of the applied current or the magnetization is reversed. The dependences of the spin AH-UMR effect on materials and geometric parameters are analyzed and compared with other nonlinear magnetoresistances. In particular, we show that, in magnetic bilayers where spin anomalous Hall and spin Hall effects are comparable, the overall UMR may undergo a sign change when the thickness of either layer is varied, suggesting a scheme to quantify the spin Hall or spin anomalous Hall angle via a nonlinear transport measurement.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Tunable spin-charge conversion in class-I topological Dirac semimetals

We theoretically demonstrate that class-I topological Dirac semimetals (TDSMs) can provide a platform for realizing both electrically and magnetically tunable spin-charge conversion. With time-reversal symmetry, the spin component along the uniaxial rotation axis ($z$-axis) is approximately conserved, which leads to an anisotropic spin Hall effect -- the resulting spin Hall current relies on the relative orientation between the external electric field and the $z$-axis. The application of a magnetic field, on the other hand, breaks time-reversal symmetry, driving the TDSM into a Weyl semimetal phase and, consequently, partially converting the spin current to a charge Hall current. Using the Kubo formulas, we numerically evaluate the spin and charge Hall conductivities based on a low-energy TDSM Hamiltonian together with the Zeeman coupling. Besides the conventional tensor element of the spin Hall conductivity $σ_{xy}^z$, we find that unconventional components, such as $σ_{xy}^x$ and $σ_{xy}^y$, also exist and vary as the magnetic field is rotated. Likewise, the charge Hall conductivity also exhibits appreciable tunability upon variation of the magnetic field. We show that such tunability -- as well as large spin-charge conversion efficiency -- arises from the interplay of symmetry and band topology of the TDSMs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers

The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that a moderate change in the spin orientation of a collinear antiferromagnet may have a significant effect on the electronic band structure. Among numerous electrical probes to read out such magnetic order, unidirectional magnetoresistance (UMR), where the resistance changes under the reversal of the current direction, can provide rich insights into the transport properties of spin-orbit coupled systems. However, UMR has never been observed in antiferromagnets before, given the absence of intrinsic spin-dependent scattering. Here, we report a UMR in the antiferromagnetic phase of a FeRh$|$Pt bilayer, which undergoes a sign change and then increases strongly with an increasing external magnetic field, in contrast to UMRs in ferromagnetic and nonmagnetic systems. We show that Rashba spin-orbit coupling alone cannot explain the sizable UMR in the antiferromagnetic bilayer and that field-induced spin canting distorts the Fermi contours to greatly enhance the UMR by two orders of magnitude. Our results can motivate the growing field of antiferromagnetic spintronics, and suggest a route to the development of tunable antiferromagnet-based spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Discoveries of interfacial topological Hall effect (THE) provide an ideal platform for exploring physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures such as strong spin-orbit coupling (SOC). Here we report the observation of a giant THE signal of 1.39 $μΩ\cdot$cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nonlinear Hall effect in Weyl semimetals induced by chiral anomaly

We predict a nonlinear Hall effect in certain Weyl semimetals with broken inversion symmetry. When the energy dispersions about pairs of Weyl nodes are skewed -- the Weyl cones are "tilted" -- the concerted actions of the anomalous velocity and the chiral anomaly give rise to the nonlinear Hall effect. This Hall conductivity is linear in both electric and magnetic fields, and depends critically on the tilting of the Weyl cones. We also show that this effect does not rely on a finite Berry curvature dipole, in contrast to the intrinsic quantum nonlinear Hall effect that was recently observed in type-II Weyl semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Distinguishing antiferromagnetic spin sublattices via the spin Seebeck effect

Antiferromagnets are beneficial for future spintronic applications due to their zero magnetic moment and ultrafast dynamics. But gaining direct access to their antiferromagnetic order and identifying the properties of individual magnetic sublattices, especially in thin films and small-scale devices, remains a formidable challenge. So far, the existing read-out techniques such as anisotropic magnetoresistance, tunneling anisotropic magnetoresistance, and spin-Hall magnetoresistance, are even functions of sublattice magnetization and thus allow us to detect different orientations of the Néel order for antiferromagnets with multiple easy axes. In contrast direct electrical detection of oppositely oriented spin states along the same easy axes (e.g., in uniaxial antiferromagnets) requires sensitivity to the direction of individual sublattices and thus is more difficult. In this study, using spin Seebeck effect, we report the electrical detection of the two sublattices in a uniaxial antiferromagnet Cr2O3. We find the rotational symmetry and hysteresis behavior of the spin Seebeck signals measured at the top and bottom surface reflect the dierction of the surface sublattice moments, but not the Néel order or the net moment in the bulk. Our results demonstrate the important role of interface spin sublattices in generating the spin Seebeck voltages, which provide a way to access each sublattice independently, enables us to track the full rotation of the magnetic sublattice, and distinguish different and antiparallel antiferromagnetic states in uniaxial antiferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Theory of bilinear magneto-electric resistance from topological-insulator surface states

We theoretically investigate a new kind of nonlinear magnetoresistance on the surface of three-dimensional topological insulators (TIs). At variance with the unidirectional magnetoresistance (UMR) effect in magnetic bilayers, this nonlinear magnetoresistance does not rely on a conducting ferromagnetic layer and scales linearly with both the applied electric and magnetic fields; for this reason, we name it bilinear magneto-electric resistance (BMER). We show that the sign and the magnitude of the BMER depends sensitively on the orientation of the current with respect to the magnetic field as well as the crystallographic axes -- a property that can be utilized to map out the spin texture of the topological surface states via simple transport measurement, alternative to the angle-resolved photoemission spectroscopy (ARPES).

0 citations0 reviewsNo code linkedOpen access