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Researcher profile

Stephen Fahy

Stephen Fahy contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.otherphysics.comp-ph

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Published work

6 published item(s)

preprint2022arXiv

Effect of strain and many-body corrections on the band inversions and topology of bismuth

The electronic band structure of Bi is calculated using state of the art electronic structure methods, including density functional theory and G$_0$W$_0$ quasiparticle approximations. The delicate ordering of states at the L point of the Brillouin zone, which determines the topological character of the electronic bands, is investigated in detail. The effect on the bands of strain, changing the structural parameters of the rhombohedral crystal structure, is shown to be important in determining this ordering and the resulting topological character.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electronic properties of bismuth nanostructures

The passivation of thin Bi(1 1 1) films with hydrogen and oxide capping layers is investigated from first principles. Considering termination-related changes of the crystal structure, we show how the bands and density of states are affected. In the context of the much discussed semimetal-to-semiconductor transition and the band topology of the bulk material, we consider the effects of confinement in the whole Brillouin zone and go beyond standard density functional theory by including many-body interactions via the G$_0$W$_0$ approximation. The conductivity of unterminated films is calculated via the Boltzmann transport equation using the simple constant relaxation time approximation and compared to experimental observations that have suggested a two-channel model.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Temperature induced band convergence, intervalley scattering and thermoelectric transport in p-type PbTe

Achieving high valley degeneracy (i.e. "band convergence") in a material usually results in considerably enhanced thermoelectric properties. However, it is still unclear why this strategy of designing efficient thermoelectric materials is so successful, since the benefit of increased density of states may be severely degraded by intervalley scattering. Using first-principles calculations, we investigate these effects in $p$-type PbTe, where temperature induces alignment of the $L$ and $Σ$ valleys at $\sim$~620~K. We explicitly show that the thermoelectric power factor and figure of merit peak near the band convergence temperature. The figure of merit maximum is larger than those of the individual $L$ and $Σ$ valleys. Surprisingly, intervalley scattering does not considerably affect the figure of merit near the band convergence temperature and optimal doping conditions, although it reduces the power factor by almost a factor of 2. Our results suggest that band convergence will significantly increase the figure of merit if intervalley scattering is roughly proportional to the density of states and the lattice thermal conductivity is considerably lower than the electronic thermal conductivity, even if intervalley scattering is strong.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The origin of the lattice thermal conductivity enhancement at the ferroelectric phase transition in GeTe

The proximity to structural phase transitions in IV-VI thermoelectric materials is one of the main reasons for their large phonon anharmonicity and intrinsically low lattice thermal conductivity $κ$. However, the $κ$ of GeTe increases at the ferroelectric phase transition near $700$ K. Using first-principles calculations with the temperature dependent effective potential method, we show that this rise in $κ$ is the consequence of negative thermal expansion in the rhombohedral phase and increase in the phonon lifetimes in the high-symmetry phase. Negative thermal expansion increases phonon group velocities, which counteracts enhanced anharmonicity of phonon modes and boosts $κ$ close to the phase transition in the rhombohedral phase. A drastic decrease in the anharmonic force constants in the cubic phase increases the phonon lifetimes and $κ$. Strong anharmonicity near the phase transition induces non-Lorentzian shapes of the phonon power spectra. To account for these effects, we implement a novel method of calculating $κ$ based on the Green-Kubo approach and find that the Boltzmann transport equation underestimates $κ$ near the phase transition. Our findings elucidate the influence of structural phase transitions on $κ$ and provide guidance for design of better thermoelectric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Structural and thermal transport properties of ferroelectric domain walls in GeTe from first principles

Ferroelectric domain walls are boundaries between regions with different polarization orientations in a ferroelectric material. Using first principles calculations, we characterize all different types of domain walls forming on ($11\bar{1}$), ($111$) and ($1\bar{1}0$) crystallographic planes in thermoelectric GeTe. We find large structural distortions in the vicinity of most of these domain walls, which are driven by polarization variations. We show that such strong strain-order parameter coupling will considerably reduce the lattice thermal conductivity of GeTe samples containing domain walls with respect to single crystal. Our results thus suggest that domain engineering is a promising path for enhancing the thermoelectric figure of merit of GeTe.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Towards temperature-induced topological phase transition in SnTe: A first principles study

The temperature renormalization of the bulk band structure of a topological crystalline insulator, SnTe, is calculated using first principles methods. We explicitly include the effect of thermal-expansion-induced modification of electronic states and their band inversion on electron-phonon interaction. We show that the direct gap decreases with temperature, as both thermal expansion and electron-phonon interaction drive SnTe towards the phase transition to a topologically trivial phase as temperature increases. The band gap renormalization due to electron-phonon interaction exhibits a non-linear dependence on temperature as the material approaches the phase transition, while the lifetimes of the conduction band states near the band edge show a non-monotonic behavior with temperature. These effects should have important implications on bulk electronic and thermoelectric transport in SnTe and other topological insulators.

0 citations0 reviewsNo code linkedOpen access