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Stefan Schulz

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Impact of random alloy fluctuations on the electronic and optical properties of (Al,Ga)N quantum wells: Insights from tight-binding calculations

Light emitters based on the semiconductor alloy aluminium gallium nitride ((Al,Ga)N) have gained significant attention in recent years due to their potential for a wide range of applications in the ultraviolet (UV) spectral window. However, current state-of-the-art (Al,Ga)N light emitters exhibit very low internal quantum efficiencies (IQEs). Therefore, understanding the fundamental electronic and optical properties of (Al,Ga)N-based quantum wells is key to improving the IQE. Here, we target the electronic and optical properties of c-plane Al$_x$Ga$_{1-x}$N/AlN quantum wells by means of an empirical atomistic tight-binding model. Special attention is paid to the impact of random alloy fluctuations on the results as well as the aluminium content x in the well. We find that across the studied Al content range (from 10% to 75% Al) strong hole wave function localization effects are observed. Additionally, with increasing Al content, electron wave functions start also to exhibit carrier localization features. Overall, our investigations on the electronic structure of c-plane Al$_x$Ga$_{1-x}$N/AlN quantum wells reveal that already random alloy fluctuations are sufficient to lead to (strong) carrier localization effects. Furthermore, our results indicate that random alloy fluctuations impact the degree of optical polarization in c-plane Al$_x$Ga$_{1-x}$N quantum wells. We find that the switching from transverse electric to transverse magnetic light polarization occurs at higher Al contents in the atomistic calculation, which accounts for random alloy fluctuations, when compared to the outcome of widely used virtual crystal approximations. This observation is important for light extraction efficiencies in (Al,Ga)N-based light emitting diodes operating in the deep UV.

preprint2020arXiv

Polar InGaN/GaN quantum wells: Revisiting the impact of carrier localization on the green gap problem

We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier localization effects to the green gap problem. Studying the localization length and electron-hole overlaps at low and elevated temperatures, we find alloy-induced localization effects are crucial for the accurate description of InGaN quantum wells across the range of In content studied. However, our calculations show very little change in the localization effects when moving from the blue to the green spectral regime; i.e. when the internal quantum efficiency and wall plug efficiencies reduce sharply, for instance, the in-plane carrier separation due to alloy induced localization effects change weakly. We conclude that other effects, such as increased defect densities, are more likely to be the main reason for the green gap problem. This conclusion is further supported by our finding that the electron localization length is large, when compared to that of the holes, and changes little in the In composition range of interest for the green gap problem. Thus electrons may become increasingly susceptible to an increased (point) defect density in green emitters and as a consequence the nonradiative recombination rate may increase.

preprint2016arXiv

Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots

We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and study of 180 individual QDs allow us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that a-plane InGaN QDs are highly insensitive to size differences, shape anisotropies, and indium content fluctuations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1-100] axis, with the other 9% polarized orthogonal to this direction. When coupled with their ability to emit single-photons, a-plane QDs are good candidates for the generation of linearly polarized single-photons, a feature attractive for quantum cryptography protocols.

preprint2015arXiv

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells

We present an atomistic description of the electronic and optical properties of $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accounts for fluctuations of well width, local alloy composition, strain and built-in field fluctuations as well as Coulomb effects. We find a strong hole and much weaker electron wave function localization in InGaN random alloy quantum wells. The presented calculations show that while the electron states are mainly localized by well-width fluctuations, the holes states are already localized by random alloy fluctuations. These localization effects affect significantly the quantum well optical properties,leading to strong inhomogeneous broadening of the lowest interband transition energy. Our results are compared with experimental literature data.

preprint2013arXiv

Theory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides

We present a theory of local electric polarization in crystalline solids and apply it to study the case of wurtzite group-III nitrides. We show that a local value of the electric polarization, evaluated at the atomic sites, can be cast in terms of a summation over nearest-neighbor distances and Born effective charges. Within this model, the local polarization shows a direct relation to internal strain and can be expressed in terms of internal strain parameters. The predictions of the present theory show excellent agreement with a formal Berry phase calculation for random distortions of a test-case CuPt-like InGaN alloy and InGaN supercells with randomly placed cations. While the present level of theory is appropriate for highly ionic compounds, we show that a more complex model is needed for less ionic materials, in which the strain dependence of Born effective charges has to be taken into account. Moreover, we provide ab initio parameters for GaN, InN and AlN, including hybrid functional values for the piezoelectric coefficients and the spontaneous polarization, which we use to accurately implement the local theory expressions. In order to calculate the local polarization potential, we also present a point dipole method. This method overcomes several limitations related to discretization and resolution which arise when obtaining the local potential by solving Poisson's equation on an atomic grid. Finally, we perform tight-binding supercell calculations to assess the impact of the local polarization potential arising from alloy fluctuations on the electronic properties of InGaN alloys. In particular, we find that the large upward bowing with composition of the InGaN valence band edge is strongly influenced by local polarization effects. Furthermore, our analysis allows us to extract composition-dependent bowing parameters for the energy gap and valence and conduction band edges.