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Stefan Haas

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Published work

2 published item(s)

preprint2016arXiv

From leaf to tree: upscaling of artificial photosynthesis

Energy storage becomes crucial for energy systems with an increasing share of renewable energy sources. Artificial photosynthesis, in particular photovoltaic water splitting, provides both sustainable energy generation and energy storage in the form of hydrogen. However, only a few concepts for scalable devices were reported in the literature. Here, we introduce a new concept which, by design, is scalable and compatible with every thin-film photovoltaic technology. The concept allows for independent geometrical optimization of the photovoltaic and the electrochemical part. The scalability is achieved by continuous mirroring of a base unit. We demonstrate a fully integrated, wireless device with a stable and bias-free operation for 40 hours. The concept was scaled to an area of 64 cm2 comprising 13 base units and exhibited a solar-to-hydrogen efficiency of 3.9%. The concept and its successful realization is an important contribution towards the large scale application of artificial photosynthesis.

preprint2015arXiv

A concept for Lithography-free patterning of silicon heterojunction back-contacted solar cells by laser processing

Silicon heterojunction (SHJ) solar cells with an interdigitated back-contact (IBC) exhibit high conversion efficiencies of up to 25.6%. However, due to the sophisticated back-side pattern of the doped layers and electrode structure many processing and patterning steps are required. A simplification of the patterning steps could ideally increase the yield and/or lower the production costs. We propose a patterning approach for IBC SHJ solar cells free of any photo-lithography with the help of laser-induced forward transfer (LIFT) of the individual layer stacks to create the required back-contact pattern. The concept has the potential to lower the number of processing steps significantly while at the same time giving a large degree of freedom in the processing conditions optimization of emitter and BSF since deposition of the intrinsic/doped layers and processing of the wafer are all independent from each other.