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Soumya Mukherjee

Soumya Mukherjee contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Representing the stress and strain energy of elastic solids with initial stress and transverse texture anisotropy

Real-world solids, such as rocks, soft tissues, and engineering materials, are often under some form of stress. Most real materials are also, to some degree, anisotropic due to their microstructure, a characteristic often called the `texture anisotropy'. This anisotropy can stem from preferential grain alignment in polycrystalline materials, aligned micro-cracks, or structural reinforcement, such as collagen bundles in biological tissues, steel rods in prestressed concrete and reinforcing fibres in composites. Here we establish a framework for initially stressed solids with transverse texture anisotropy. We consider that the strain energy per unit mass of the reference is an explicit function of the elastic deformation gradient, the initial stress tensor, and the texture anisotropy. We determine the corresponding constitutive relations and develop examples of nonlinear strain energies which depend explicitly on the initial stress and direction of texture anisotropy. As an application, we then employ these models to analyse the stress distribution of an inflated initially stressed cylinder with texture anisotropy, and the tension of a welded metal plate. We also deduce the elastic moduli needed to describe linear elasticity from stress reference with transverse texture anisotropy. As an example we show how to measure the stress with small-amplitude shear waves.

preprint2020arXiv

Symmetry-Adapted Tight-Binding Electronic Structure Analysis of Carbon Nanotubes with Defects, Kinks, Twist, and Stretch

This paper applies a symmetry-adapted method to examine the influence of deformation and defects on the electronic structure and band structure in carbon nanotubes. First, the symmetry-adapted approach is used to develop the analog of Bloch waves. Building on this, the technique of perfectly-matched layers is applied to develop a method to truncate the computational domain of electronic structure calculations without spurious size effects. This provides an efficient and accurate numerical approach to compute the electronic structure and electromechanics of defects in nanotubes. The computational method is applied to study the effect of twist, stretch, and bending, with and without various types of defects, on the band structure of nanotubes. Specifically, the effect of stretch and twist on band structure in defect-free conducting and semiconducting nanotubes is examined, and the interaction with vacancy defects is elucidated. Next, the effect of localized bending or kinking on the electronic structure is studied. Finally, the paper examines the effect of 5-8-5 Stone-Wales defects. In all of these settings, the perfectly-matched layer method enables the calculation of localized non-propagating defect modes with energies in the bandgap of the defect-free nanotube.