Researcher profile

Soobeom Lee

Soobeom Lee contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Role of the chiral spin configuration in field-free spin-orbit torque-induced magnetization switching by a locally injected spin current

For deterministic magnetization switching by spin-orbit torque (SOT) in a perpendicular magnetic anisotropy system, an additional in-plane direction magnetic field is essential for deterministic switching by breaking the magnetization symmetry. Realizing chirality in a magnetic ordering system can be one approach for achieving asymmetry in the lateral direction for field-free magnetization switching. However, systematic analysis of the influence of the chiral spin system on deterministic switching is still scarce. In this report, the achievement of field-free SOT-induced magnetization switching by using a chiral spin configuration is investigated by experiments and micromagnetic simulations. We designed a system in which only part of the ferromagnetic layer overlaps with the heavy metal layer in the Pt/Co/MgO structure. Therefore, a spin current is exerted only on a local area of the ferromagnetic layer, which results in a Néel-type chiral spin configuration. The induced chiral spin configuration can be stabilized (or destabilized) depending on the sign of the interfacial Dzyaloshinskii-Moriya interaction of the system. The stabilized spin configuration plays a crucial role in the deterministic switching in zero field. We expect our findings to widen the perspective on chirality-based all-electrical SOT device fabrication.

preprint2019arXiv

Investigation of gating effect in Si spin MOSFET

A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant electric current. An unprecedented reduction in the spin accumulation voltages in a Si spin MOSFET under negative gate voltage applications is observed in a high electric bias current regime. To support our claim, the electric bias current dependence of the spin accumulation voltage under the gate voltage applications is investigated in detail and compared to a spin drift diffusion model including the conductance mismatch effect. We proved that the drastic decrease of the mobility and spin lifetime in the Si channel is due to the optical phonon emission at the high electric bias current, which consequently reduced the spin accumulation voltage.