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Soo-Man Seo

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Published work

5 published item(s)

preprint2013arXiv

Spin wave nonreciprocity for logic device applications

The utilization of spin waves as eigenmodes of the magnetization dynamics for information processing and communication has been widely explored recently due to its high operational speed with low power consumption and possible applications for quantum computations. Previous proposals of spin wave Mach-Zehnder devices were based on the spin wave phase, a delicate entity which can be easily disrupted. Here, we propose a complete logic system based on the spin wave amplitude utilizing the nonreciprocal spin wave behavior excited by microstrip antennas. The experimental data reveal that the nonreciprocity of magnetostatic surface spin wave can be tuned by the bias magnetic field. Furthermore, engineering of the device structure could result in a high nonreciprocity factor for spin wave logic applications.

preprint2013arXiv

Spin-Wave Propagation in the Presence of Interfacial Dzyaloshinskii-Moriya Interaction

In ferromagnetic thin films, broken inversion symmetry and spin-orbit coupling give rise to interfacial Dzyaloshinskii-Moriya interactions. Analytic expressions for spin-wave properties show that the interfacial Dzyaloshinskii-Moriya interaction leads to non-reciprocal spin-wave propagation, i.e. different properties for spin waves propagating in opposite directions. In favorable situations, it can increase the spin-wave attenuation length. Comparing measured spin wave properties in ferromagnet$|$normal metal bilayers and other artificial layered structures with these calculations can provide a useful characterization of the interfacial Dzyaloshinskii-Moriya interactions.

preprint2012arXiv

Current-induced motion of a transverse magnetic domain wall in the presence of spin Hall effect

We theoretically study the current-induced dynamics of a transverse magnetic domain wall in bi-layer nanowires consisting of a ferromagnet on top of a nonmagnet having strong spin-orbit coupling. Domain wall dynamics is characterized by two threshold current densities, $J_{th}^{WB}$ and $J_{th}^{REV}$, where $J_{th}^{WB}$ is a threshold for the chirality switching of the domain wall and $J_{th}^{REV}$ is another threshold for the reversed domain wall motion caused by spin Hall effect. Domain walls with a certain chirality may move opposite to the electron-flow direction with high speed in the current range $J_{th}^{REV} < J < J_{th}^{WB}$ for the system designed to satisfy the conditions $J_{th}^{WB} > J_{th}^{REV}$ and α> β, where αis the Gilbert damping constant and βis the nonadiabaticity of spin torque. Micromagnetic simulations confirm the validity of analytical results.

preprint2012arXiv

Current-induced synchronized switching of magnetization

We investigate current-induced magnetization switching for a multilayer structure that allows a reduced switching current while maintaining high thermal stability of the magnetization. The structure consists of a perpendicular polarizer, a perpendicular free-layer, and an additional free-layer having in-plane magnetization. When the current runs perpendicular to the structure, the in-plane free-layer undergoes a precession and supplies an internal rf field to the perpendicular free-layer, resulting in a reduced switching current for one current polarity. For the other polarity, the in-plane free-layer almost saturates perpendicular to the plane and acts as another perpendicular polarizer, which also reduces the switching current.

preprint2012arXiv

Magnetization dynamics induced by in-plane currents in ultrathin magnetic nanostructures

Ultrathin magnetic systems have properties qualitatively different from their thicker counterparts, implying that different physics governs their properties. We demonstrate that various such properties can be explained naturally by the Rashba spin-orbit coupling in ultrathin magnetic systems. This work will be valuable for the development of next generation spintronic devices based on ultrathin magnetic systems.