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Sonia Conesa-Boj

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cond-mat.mtrl-sci hep-ph cond-mat.mes-hall

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preprint2022arXiv

Spatially-Resolved Band Gap and Dielectric Function in 2D Materials from Electron Energy Loss Spectroscopy

The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D materials achieving a spatial resolution down to a few nanometers. This approach is based on machine learning techniques developed in particle physics and makes possible the automated processing and interpretation of spectral images from electron energy-loss spectroscopy (EELS). Individual spectra are classified as a function of the thickness with $K$-means clustering and then used to train a deep-learning model of the zero-loss peak background. As a proof-of-concept we assess the band gap and dielectric function of InSe flakes and polytypic WS$_2$ nanoflowers, and correlate these electrical properties with the local thickness. Our flexible approach is generalizable to other nanostructured materials and to higher-dimensional spectroscopies, and is made available as a new release of the open-source EELSfitter framework.

preprint2020arXiv

Charting the low-loss region in Electron Energy Loss Spectroscopy with machine learning

Exploiting the information provided by electron energy-loss spectroscopy (EELS) requires reliable access to the low-loss region where the zero-loss peak (ZLP) often overwhelms the contributions associated to inelastic scatterings off the specimen. Here we deploy machine learning techniques developed in particle physics to realise a model-independent, multidimensional determination of the ZLP with a faithful uncertainty estimate. This novel method is then applied to subtract the ZLP for EEL spectra acquired in flower-like WS$_2$ nanostructures characterised by a 2H/3R mixed polytypism. From the resulting subtracted spectra we determine the nature and value of the bandgap of polytypic WS$_2$, finding $E_{\rm BG} = 1.6_{-0.2}^{+0.3}\,{\rm eV}$ with a clear preference for an indirect bandgap. Further, we demonstrate how this method enables us to robustly identify excitonic transitions down to very small energy losses. Our approach has been implemented and made available in an open source Python package dubbed EELSfitter.

preprint2020arXiv

Illuminating the electronic properties of WS$_2$ polytypism with electron microscopy

Tailoring the specific stacking sequences (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either the 2H or 3R crystalline phases have been routinely studied, our knowledge of those based on mixed 2H/3R polytypes is far more limited. Here we report on the characterization of mixed 2H/3R free-standing WS$_2$ nanostructures displaying a flower-like configuration by means of advanced transmission electron microscopy. We correlate their rich variety of shape-morphology combinations with relevant local electronic properties such as their edge, surface, and bulk plasmons. Electron energy-loss spectroscopy combined with machine learning reveals that the 2H/3R polytype displays an indirect band gap with $E_{\rm BG}=1.6^{+0.3}_{-0.2}~{\rm eV}$. Further, we identify the presence of energy-gain peaks in the EEL spectra characterized by a gain-to-loss ratio $I_G/I_L>1$. Such property could be exploited to develop novel cooling strategies for atomically thin TMD nanostructures and devices built upon them. Our results represent a stepping stone towards an improved understanding of TMDs nanostructures based on mixed crystalline phases.

preprint2010arXiv

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminescence spectroscopy and transmission electron microscopy. The photoluminescence of wurtzite GaAs is consistent with a band gap of 1.5 eV. In the polytypic nanowires, it is shown that the regions that are predominantly composed of either zinc-blende or wurtzite phase show photoluminescence emission close to the bulk GaAs band gap, while regions composed of a nonperiodic superlattice of wurtzite and zinc-blende phases exhibit a redshift of the photoluminescence spectra as low as 1.455 eV. The dimensions of the quantum heterostructures are correlated with the light emission, allowing us to determine the band alignment between these two crystalline phases. Our first-principles electronic structure calculations within density functional theory, employing a hybrid-exchange functional, predict band offsets and effective masses in good agreement with experimental results.