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Somaditya Sen

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cond-mat.mtrl-sci physics.app-ph

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preprint2025arXiv

Increased Covalence and V-center mediated Dark Fenton-Like Reactions in V-doped TiO2: Mechanisms of Enhanced Charge-Transfer

Tuning the valence state and electronic structure of catalytically active sites is crucial for improving Fenton and Fenton-like reactions, which rely on the efficient activation of the H2O2 molecule. Pure TiO2, however, has inadequate activity towards the H2O2 activation and is often constrained by the intrinsic electronic limitations of pristine TiO2. Herein, a rational approach has been demonstrated to improve the Fenton-like catalytic performance of TiO2 through multivalent vanadium (V) doping. A comprehensive characterization using X-Ray Diffraction (XRD), Raman spectroscopy, UV-Vis spectroscopy, X-Ray photoelectron spectroscopy (XPS), Electron paramagnetic resonance (EPR), and Density functional theory (DFT) reveals that V incorporation substantially alters the electronic structure of TiO2. The DFT results, supported by experimental data, indicate that V doping enhances Ti-O covalence and introduces mid-gap states, resulting in a reduced band gap and improved charge transfer. XPS confirms the coexistence of multiple oxidation states of V, which serve as active centres for activating H2O2 and generating OH radicals. As a result, V-doped TiO2 exhibits significantly enhanced dark-catalytic activity in degrading the organic dye Rhodamine B (RhB). Overall, this study provides fundamental insights into multivalent-cation-induced valence state and electronic structure modulation in TiO2, offering a promising strategy for designing high-performance catalysts via defect engineering for sustainable environmental remediation.

preprint2022arXiv

Room Temperature Magneto-dielectric coupling in the CaMnO3 modified NBT lead-free ceramics

The sol-gel prepared (1-x) Na0.5Bi0.5TiO3- (x) CaMnO3 (x=0, 0.03, 0.06, 0.12) compositions show a Rhombohedral (R3c) phase for x=0.06 while a mixed Rhombohedral (R3c) and orthorhombic (Pnma) phases for the x=0.12. The lattice volume consistently decreased with an increase in the CaMnO3 content. The phase transition temperature (Tc) decreased with an increase in the CaMnO3 compositions. The room temperature dielectric constant increased, and loss decreased for the x=0.03 composition due to a decrease in the oxygen vacancy and Bi loss confirmed by the valence state study (XPS). All the compositions show a variation of the room temperature dielectric property with an application of magnetic field confirming a magnetodielectric coupling. The x=0.06 composition shows the highest negative magnetodielectric constant (MD%) of 3.69 at 100kHz at an applied field of 5 kG.

preprint2016arXiv

Importance of strain reduction in improvement of optical transmission and conductance in Si4+ doped ZnO: a probable new moisture resistant Transparent Conductive Oxide

Si doped ZnO has been reported to be a better conductor than pure ZnO. It is reported that carrier density increases and hence conductivity increases. However, the effect on optical transmission is yet not clear until our recent report [1]. Zn1-xSixO for x= 0, 0.013, 0.020 and 0.027 have been synthesized using sol-gel method (a citric acid-glycerol route) followed by solid state sintering. We found that there is a decrease in defect states due to Si doping. The correlation of strain to the decrement in vacancy sites is discussed in this report. In modern electronics and solar cell fabrication, transparent conductive oxides (TCOs) are important components which conduct electrically without absorbing visible light. Known TCOs are extremely costly and are composed of non-abundant elements. Search for new ecofriendly, cheap and sustainable TCOs has been a recent research of attraction. Keeping in mind that most solar cells are exposed to natural conditions, the humidity tolerance becomes a determining factor. We report that sensitivity to moisture decreases drastically while the conductivity and optical transparency increases with doping. The reduction of strain and improvement of transport properties results in increased conductivity of Si doped ZnO pellets, tempting us to envisage this material as a probable alternate TCO.

preprint2013arXiv

Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb2Se3

The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in electronic topology: an E2 g phonon softens unusually and its linewidth exhibits an asymmetric peak at the pressure induced electronic topological transition (ETT) in Sb2Se3 crystal. Our first-principles calculations confirm the electronic transition from band to topological insulating state with reversal of parity of electronic bands passing through a metallic state at the ETT, but do not capture the phonon anomalies which involve breakdown of adiabatic approximation due to strongly coupled dynamics of phonons and electrons. Treating this within a four-band model of topological insulators, we elucidate how nonadiabatic renormalization of phonons constitutes readily measurable bulk signatures of an ETT, which will facilitate efforts to develop topological insulators by modifying a band insulator.