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Researcher profile

Simone Casolo

Simone Casolo contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

3 published item(s)

preprint2012arXiv

Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms

We report the local atomic and electronic structure of a nitrogen-doped graphite surface by scanning tunnelling microscopy, scanning tunnelling spectroscopy, X-ray photoelectron spectroscopy, and first-principles calculations. The nitrogen-doped graphite was prepared by nitrogen ion bombardment followed by thermal annealing. Two types of nitrogen species were identified at the atomic level: pyridinic-N (N bonded to two C nearest neighbours) and graphitic-N (N bonded to three C nearest neighbours). Distinct electronic states of localized π states were found to appear in the occupied and unoccupied regions near the Fermi level at the carbon atoms around pyridinic-N and graphitic-N species, respectively. The origin of these states is discussed based on the experimental results and theoretical simulations.

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preprint2012arXiv

Theoretical analysis of oxygen vacancies in layered sodium cobaltate Na_xCoO_{2-δ}

Sodium cobaltate with high Na content is a promising thermoelectric material. It has recently been reported that oxygen vacancies can alter the material properties, reducing its figure of merit. However, experimental data concerning the oxygen stoichiometry are contradictory. We therefore studied the formation of oxygen vacancies in Na_xCoO_2 with first principles calculations, focusing on x = 0.75. We show that a very low oxygen vacancy concentration is expected at the temperatures and partial pressures relevant for applications.

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preprint2011arXiv

The effect of atomic-scale defects and dopants on graphene electronic structure

Graphene, being one-atom thick, is extremely sensitive to the presence of adsorbed atoms and molecules and, more generally, to defects such as vacancies, holes and/or substitutional dopants. This property, apart from being directly usable in molecular sensor devices, can also be employed to tune graphene electronic properties. Here we briefly review the basic features of atomic-scale defects that can be useful for material design. After a brief introduction on isolated $p_z$ defects, we analyse the electronic structure of multiple defective graphene substrates, and show how to predict the presence of microscopically ordered magnetic structures. Subsequently, we analyse the more complicated situation where the electronic structure, as modified by the presence of some defects, affects chemical reactivity of the substrate towards adsorption (chemisorption) of atomic/molecular species, leading to preferential sticking on specific lattice positions. Then, we consider the reverse problem, that is how to use defects to engineer graphene electronic properties. In this context, we show that arranging defects to form honeycomb-shaped superlattices (what we may call "supergraphenes") a sizeable gap opens in the band structure and new Dirac cones are created right close to the gapped region. Similarly, we show that substitutional dopants such as group IIIA/VA elements may have gapped quasi-conical structures corresponding to massive Dirac carriers. All these possible structures might find important technological applications in the development of graphene-based logic transistors.

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