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Researcher profile

Silvana Botti

Silvana Botti contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phphysics.chem-ph

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Published work

11 published item(s)

preprint2022arXiv

Band lineup at hexagonal Si$_x$Ge$_{1-x}$/Si$_y$Ge$_{1-y}$ alloy interfaces

The natural and true band profiles at heterojunctions formed by hexagonal Si$_x$Ge$_{1-x}$ alloys are investigated by a variety of methods: density functional theory for atomic geometries, approximate quasiparticle treatments for electronic structures, different band edge alignment procedures, and construction of various hexagonal unit cells to model alloys and heterojunctions. We demonstrate that the natural band offsets are rather unaffected by the choice to align the vacuum level or the branch point energy, as well as by the use of a hybrid or the Tran-Blaha functional. At interfaces between Ge-rich alloys we observe a type-I heterocharacter with direct band gaps, while Si-rich junctions are type-I but with an indirect band gap. The true band lineups at pseudomorphically grown heterostructures are strongly influenced by the generated biaxial strain of opposite sign in the two adjacent alloys. Our calculations show that the type-I character of the interface is reduced by strain. To prepare alloy heterojunctions suitable for active optoelectronic applications, we discuss how to decrease the compressive biaxial strain at Ge-rich alloys.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Bandgap of two-dimensional materials: Thorough assessment of modern exchange-correlation functionals

The density functional theory (DFT) approximations that are the most accurate for the calculation of band gap of bulk materials are hybrid functionals like HSE06, the MBJ potential, and the GLLB-SC potential. More recently, generalized gradient approximations (GGA), like HLE16, or meta-GGAs, like (m)TASK, have proven to be also quite accurate for the band gap. Here, the focus is on 2D materials and the goal is to provide a broad overview of the performance of DFT functionals by considering a large test set of 298 2D systems. The present work is an extension of our recent studies [Rauch et al., Phys. Rev. B 101, 245163 (2020) and Patra et al., J. Phys. Chem. C 125, 11206 (2021)]. Due to the lack of experimental results for the band gap of 2D systems, $G_{0}W_{0}$ results were taken as reference. It is shown that the GLLB-SC potential and mTASK functional provide the band gaps that are the closest to $G_{0}W_{0}$. Following closely, the local MBJ potential has a pretty good accuracy that is similar to the accuracy of the more expensive hybrid functional HSE06.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ alloy thin films

We study the dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ thin film alloys using spectroscopic ellipsometry in the spectral range between 0.7 eV to 6.4 eV, in combination with first-principles calculations based on density functional theory. Through the comparison of theory and experiment, we attribute features in the dielectric function to electronic transitions at specific k-points in the Brillouin zone. The observed bandgap bowing as a function of alloy composition is discussed in terms of different physical and chemical contributions. The band splitting at the top of the valence band due to spin-orbit coupling is found to decrease with increasing Br-concentration, from a value of 660 meV for CuI to 150 meV for CuBr. This result can be understood considering the contribution of copper d-orbitals to the valence band maximum as a function of the alloy composition.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si$_x$Ge$_{1-x}$ alloys

We present a comprehensive first-principles investigation of optical, transport, and thermoelectric properties of pure and doped hexagonal Si$_x$Ge$_{1-x}$ alloys based on density-functional theory calculations, the Boltzmann transport equation, and the generalized quasi-chemical approximation to obtain alloy averages of electronic properties. At low temperature, phase decomposition into the hexagonal elementary crystals is thermodynamically favored, but around and above room temperature random alloys are predicted to be stable. While hexagonal Si has an indirect band gap, the gap of hexagonal Ge is direct with very weak optical transitions at the absorption edge. The alloy band gap remains direct for a Si content below 45\,\% and the oscillator strength of the lowest optical transitions is efficiently enhanced by alloying. The optical spectra show clear trends and both absorption edges and prominent peaks can be tuned with composition. The dependence of transport coefficients on carrier concentration and temperature is similar in cubic and hexagonal alloys. However, the latter display anisotropic response due to the reduced hexagonal symmetry. In particular, the transport mass exhibits a significant directional dependence. Seebeck coefficients and thermoelectric power factors of $n$-doped alloys show non-monotonous variations with the Si content independently of temperature.

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preprint2021arXiv

Giant optical oscillator strengths in perturbed hexagonal germanium

We present ab initio calculations of electronic and optical properties of perturbed hexagonal germanium and demonstrate that it is a superior material for active optoelectronic devices in the infrared spectral region. It is known that perfect lonsdaleite Ge is a pseudodirect semiconductor, i.e., with direct fundamental band gap but almost vanishing oscillator strength for the lowest-energy optical transitions. Perturbing the system by replacing a Ge atom in the unit cell with a Si atom boosts of the oscillator strength at the minimum direct gap by orders of magnitude, with a concurrent blue shift of the interband distances. This effect is mainly due to the increased s character of the lowest conduction band because of the perturbation-induced wave function mixing. A purely structural modification of the lonsdaleite unit cell of hexagonal Ge yields as well increased optical oscillator strengths, but their magnitude significantly depends on the actual details of the atomic geometry. In particular, moderate tensile uniaxial strain can induce an inversion of the order of the two lowest conduction bands, immediately leading to an extremely efficient enhancement of optical transitions. In general, chemical and/or structural perturbations of the lonsdaleite lattice are shown to be the key to make hexagonal germanium suitable for light emitting devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Machine-learning correction to density-functional crystal structure optimization

Density functional theory is routinely applied to predict crystal structures. The most common exchange-correlation functionals used to this end are the Perdew-Burke-Ernzerhof (PBE) approximation and its variant PBEsol. We investigate the performance of these functionals for the prediction of lattice parameters and show how to enhance their accuracy using machine learning. Our dataset is constituted by experimental crystal structures of the Inorganic Crystal Structure Database matched with PBE-optmized structures stored in the materials project database. We complement these data with PBEsol calculations. We demonstrate that the accuracy and precision of PBE/PBEsol volume predictions can be noticeably improved a posteriori by employing simple, explainable machine learning models. These models can improve PBE unit cell volumes to match the accuracy of PBEsol calculations, and reduce the error of the latter with respect to experiment by 35%. Further, the error of PBE lattice constants is reduced by a factor of 3--5. A further benefit of our approach is the implicit correction of finite temperature effects without performing phonon calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Accurate electronic band gaps of two-dimensional materials from the local modified Becke-Johnson potential

The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of electronic states is a prerequisite to design electronic or optoelectronic applications of two-dimensional materials, however, most of the theoretical methods we have available to compute band gaps are either inaccurate, computationally expensive, or only applicable to bulk systems. Here we show that reliable band structures of nanostructured systems can now be efficiently calculated using density-functional theory with the local modified Becke-Johnson exchange-correlation functional that we recently proposed. After re-optimizing the parameters of this functional specifically for two-dimensional materials, we show, for a test set of almost 300 systems, that the obtained band gaps are of comparable quality as those obtained using the best hybrid functionals, but at a very reduced computational cost. These results open the way for accurate high-throughput studies of band-structures of two-dimensional materials and for the study of van der Waals heterostructures with large unit cells.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Iodine molecule modifications with high pressure

Metallization and dissociation are key transformations in diatomic molecules at high densities particularly significant for modeling giant planets. Using X-ray absorption spectroscopy and atomistic modeling, we demonstrate that in halogens, the formation of a \textit{connected} molecular structure takes place at pressures well below metallization. Here we show that the iodine diatomic molecule first elongates of $\sim$0.007 Å~up to a critical pressure of $P_c$ $\backsim$7~GPa developing bonds between molecules. Then its length continuously decreases with pressure up to 15-20~GPa. Universal trends in halogens are shown and allow to predict for chlorine a pressure of 42$\pm$8~GPa for molecular bond-length reversal. Our findings tackle the molecule invariability paradigm in diatomic molecular phases at high pressures and may be generalized to other abundant diatomic molecules in the universe, including hydrogen.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Local modified Becke-Johnson exchange-correlation potential for interfaces, surfaces, and two-dimensional materials

The modified Becke-Johnson meta-GGA potential of density functional theory has been shown to be the best exchange-correlation potential to determine band gaps of crystalline solids. However, it cannot be consistently used for the electronic structure of non-periodic or nanostructured systems. We propose an extension of this potential that enables its use to study heterogeneous, finite and low-dimensional systems. This is achieved by using a coordinate-dependent expression for the parameter $c$ that weights the Becke-Russel exchange, in contrast to the original global formulation, where $c$ is just a fitted number. Our potential takes advantage of the excellent description of band gaps provided by the modified Becke-Johnson potential and preserves its modest computational effort. Furthermore, it yields with one single calculation band diagrams and band offsets of heterostructures and surfaces. We exemplify the usefulness and efficiency of our local meta-GGA potential by testing it for a series of interfaces (Si/SiO$_2$, AlAs/GaAs, AlP/GaP, and GaP/Si), a Si surface, and boron nitride monolayer.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stable ordered phases of cuprous iodide with complexes of copper vacancies

We perform an exhaustive theoretical study of the phase diagram of Cu-I binaries, focusing on Cu-poor compositions, relevant for p-type transparent conduction. We find that the interaction between neighboring Cu vacancies is the determining factor that stabilizes non-stoichiometric zincblende phases. This interaction leads to defect complexes where Cu vacancies align preferentially along the [100] crystallographic direction. It turns out that these defect complexes have an important influence on hole conductivity, as they lead to dispersive conducting $p$-states that extend up to around 0.8 eV above the Fermi level. We furthermore observe a characteristic peak in the density of electronic states, which could provide an experimental signature for this type of defect complexes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Validation of pseudopotential calculations for the electronic band gap of solids

Nowadays pseudopotential density-functional theory calculations constitute the standard approach to tackle solid-state electronic problems. These rely on distributed pseudopotential tables that were built from all-electron atomic calculations using few popular semi-local exchange-correlation functionals, while pseudopotentials based on more modern functionals, like meta-GGA and hybrid functionals, or for many-body methods, such as $GW$, are often not available. Because of this, employing pseudopotentials created with inconsistent exchange-correlation functionals has become a common practice. Our aim is to quantify systematically the error in the determination of the electronic band gap when cross-functional pseudopotential calculations are performed. To this end we compare band gaps obtained with norm-conserving pseudopotentials or the projector-augmented wave method with all-electron calculations for a large dataset of 473 solids. We focus in particular on density functionals that were designed specifically for band-gap calculations. On average, the absolute error is about 0.1 eV, yielding absolute relative errors in the 5-10\% range. Considering that typical errors stemming from the choice of the functional are usually larger, we conclude that the effect of choosing an inconsistent pseudopotential is rather harmless for most applications. However, we find specific cases where absolute errors can be larger than 1 eV, or others where relative errors can amount to a large fraction of the band gap.

0 citations0 reviewsNo code linkedOpen access