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Shyamal Mondal

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Published work

3 published item(s)

preprint2019arXiv

Surface scaling behaviour of size-selected Ag-nanocluster film growing under subsequent shadowing process

Surface morphology of size-selected silver nanocluster films grown by dc magnetron sputtering has been investigated by means of an atomic force microscopy (AFM). From the height-height correlation functions ( HHCF) obtained from corresponding AFM images, the scaling exponents are calculated and two types of growth regimes have been observed. In the first regime, the growth exponent is found to be \b{eta}1 = 0.27\pm0.07 close to the KPZ growth exponent, while in the second growth regime shadowing effect plays dominant role which gives the growth exponent value \b{eta}2 = 0.88\pm0.28. On the other hand for the whole deposition regime, the roughness exponent value is found to be constant around α= 0.76\pm0.02. UV-vis spectroscopy measurement suggests how the average reflectance of the film surface changes with different growth times.

preprint2016arXiv

Size and density controlled metal nanocluster embedded metal-oxide-semiconductor structure for memory applications

Metal-nanoclusters (NC), deposited by magnetron-based nanocluster source coupled with quadrupole mass filter (QMF) assembly having independent control over its size and density, are used in fabricating NC-based non-volatile memory (NVM) devices. The effect of diameter and density on the NVM charge storage characteristics are presented where Ag is used as the metal NC. The Ag-NC, sandwiched between HfO$_2$ tunnel and control oxides, is deposited by using the combination of the above two instruments. No annealing is performed at any stage of the device fabrication. The largest hysteresis loop area in the capacitance-voltage ($C-V$) characteristics of metal-oxide-semiconductor (MOS) characteristics is observed for a cluster density of 1 $\times$ 10$^{11}$ cm$^{-2}$. Further, an NC size dependent hysteresis loop area is observed with the MOS devices where the NC diameter is varied from 3 to 1.5 nm keeping the NC density at 1 $\times$ 10$^{11}$ cm$^{-2}$. The device performance is found to be improved with a reduction of the NC size and shows its best with the NC diameter of 1.5 nm. The storage time of the NVM devices also increases with the decrease in the NC diameter and exhibits their best performances for the NCs with a diameter of 1.5 nm.

preprint2013arXiv

Formation of isolated islands by size-selected copper nanocluster deposition

Deposition of size-selected metal nanoclusters on a substrate with very low kinetic energy helps to keep the clusters intact with respect to their shape and size as compared to clusters in ight condition. Here we report formation of isolated monodispersed islands of copper of desired size on carbon film by deposition of size selected copper clusters (~ 3 nm) in soft-landing method. Copper clusters were produced by a magnetron based gas aggregation type source equipped with a quardrupole mass filter (QMF) to select size of clusters before landing. Transmission Electron Microscopy (TEM) study shows that diffusion of islands is very low.