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Shuai Yue

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2 published item(s)

preprint2025arXiv

Ultrafast Exciton-Polariton Transport and Relaxation in Halide Perovskite

Halide perovskites offer a great platform for room-temperature exciton-polaritons (EPs) due to their strong oscillator strength and large exciton binding energy, promising applications in next-generation photonic and polaritonic devices. Efficient manipulation of EP transport and relaxation is critical for device performance, yet their spatiotemporal dynamics across different in-plane momenta (k//) remain poorly understood due to limitations in experimental access. In this work, we employ energy-resolved transient reflectance microscopy (TRM) combined with the dispersion relation of EPs to achieve high-resolution imaging of EP transport at specific k//. This approach directly reveals the quasi-ballistic transport and ultrafast relaxation of EPs in different k// regions, showcasing diffusion as fast as ~490 cm2/s and a relaxation time of ~95.1 fs. Furthermore, by tuning the detuning parameter, we manipulate the ballistic transport group velocity and relaxation time of EPs across varying k//. Our results reveal key insights into the dynamics of EP transport and relaxation, providing valuable guidance for the design and optimization of polaritonic devices.

preprint2019arXiv

Photoluminescence mapping and time-domain thermo-photoluminescence for rapid imaging and measurement of thermal conductivity of boron arsenide

Cubic boron arsenide (BAs) is attracting greater attention due to the recent experimental demonstration of ultrahigh thermal conductivity \k{appa} above 1000 W/mK. However, its bandgap has not been settled and a simple yet effective method to probe its crystal quality is missing. Furthermore, traditional \k{appa} measurement methods are destructive and time consuming, thus they cannot meet the urgent demand for fast screening of high \k{appa} materials. After we experimentally established 1.82 eV as the indirect bandgap of BAs and observed room-temperature band-edge photoluminescence, we developed two new optical techniques that can provide rapid and non-destructive characterization of \k{appa} with little sample preparation: photoluminescence mapping (PL-mapping) and time-domain thermo-photoluminescence (TDTP). PL-mapping provides nearly real-time image of crystal quality and \k{appa} over mm-sized crystal surfaces; while TDTP allows us to pick up any spot on the sample surface and measure its \k{appa} using nanosecond laser pulses. These new techniques reveal that the apparent single crystals are not only non-uniform in \k{appa}, but also are made of domains of very distinct \k{appa}. Because PL-mapping and TDTP are based on the band-edge PL and its dependence on temperature, they can be applied to other semiconductors, thus paving the way for rapid identification and development of high-\k{appa} semiconducting materials.