Two-Path Phonon-Interference Resonance Induces a Stop Band in Silicon Crystal Matrix by Embedded Nanoparticles Array
In this work, we report a new stop-band formation mechanism by performing the atomistic Green's function calculation and the wave-packet molecular dynamics simulation for a system with germanium-nanoparticle array embedded in a crystalline silicon matrix. When only a single nanoparticle is embedded, the local resonance, induced through destructive interference between two different phonon wave paths, gives rise to several sharp and significant transmittance dips. On the other hand, when the number of embedded nanoparticles further increases to ten, a stop band with complete phonon reflection is formed due to the two-path resonance Bragg-like phonon interference. The wave packet simulations further uncover that the stop band originates from the collective phonon resonances at the embedded nanoparticles. Compared with the traditional stop-band formation mechanism that is the single-path Bragg reflection, the resonance mechanism has a significant advantage in not requiring the strict periodicity in the embedded nanoparticles array. We also demonstrate that the stop band can significantly suppress thermal conductance in the low-frequency regime. Our work provides a robust, scalable. and easily modulable stop-band formation mechanism. which opens a new degree of freedom for phononics-related heat control.