Researcher profile

Shintaro Sato

Shintaro Sato contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Josephson junctions of Weyl semimetal $\text{WTe}_2$ induced by spontaneous nucleation of $\text{PdTe}$ superconductor

We report on the fabrication of Josephson junction devices with weak links utilizing the Weyl and higher-order topological semimetal $\text{WTe}_2$. We show that $\text{WTe}_2\text{/Pd}$ contact annealed at a low temperature of 80°C did not exhibit superconducting properties because neither $\text{WTe}_2$ nor Pd are superconductors in the ground state. Upon 180°C annealing, spontaneous formation of superconducting $\text{PdTe}$ due to Pd diffusion enabled us to obtain the interface between $\text{WTe}_2$ and superconductor suitable for the Josephson junction. This result is a facile technique to make a Josephson junction and induce Cooper pairs into topological telluride semimetals.

preprint2022arXiv

Pauli String Partitioning Algorithm with the Ising Model for Simultaneous Measurement

We propose an efficient algorithm for partitioning Pauli strings into subgroups, which can be simultaneously measured in a single quantum circuit. Our partitioning algorithm drastically reduces the total number of measurements in a variational quantum eigensolver for a quantum chemistry, one of the most promising applications of quantum computing. The algorithm is based on the Ising model optimization problem, which can be quickly solved using an Ising machine. We develop an algorithm that is applicable to problems with sizes larger than the maximum number of variables that an Ising machine can handle ($n_\text{bit}$) through its iterative use. The algorithm has much better time complexity and solution optimality than other algorithms such as Boppana--Halldórsson algorithm and Bron--Kerbosch algorithm, making it useful for the quick and effective reduction of the number of quantum circuits required for measuring the expectation values of multiple Pauli strings. We investigate the performance of the algorithm using the second-generation Digital Annealer, a high-performance Ising hardware, for up to $65,535$ Pauli strings using Hamiltonians of molecules and the full tomography of quantum states. We demonstrate that partitioning problems for quantum chemical calculations can be solved with a time complexity of $O(N)$ for $N\leq n_\text{bit}$ and $O(N^2)$ for $N>n_\text{bit}$ for the worst case, where $N$ denotes the number of candidate Pauli strings and $n_\text{bit}=8,192$ for the second-generation Digital Annealer used in this study. The reduction factor, which is the number of Pauli strings divided by the number of obtained partitions, can be $200$ at maximum.

preprint2011arXiv

Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

The concept of a novel graphene P-I-N junction switching device with a nanoribbon is proposed, and its basic operation is demonstrated in an experiment. The concept aims to optimize the operation scheme for graphene transistors toward a superior on-off property. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top gate, and these two regions are separated by a nanoribbon which works as an insulator. As a result, the device forms a (P or N)-I-(P or N) junction structure. The off state is obtained by lifting the band of the bulk graphene of the source (drain) side and lowering that of the drain (source) side, so that the device forms a P-I-N (N-I-P) junction. In this configuration, the leakage current can be reduced more effectively than the conventional single gate transistors with the same band gap size due to a high barrier height and a long tunneling length in the nanoribbon. The on state is obtained by flipping the polarity of the bias of either top gate to form a P-I-P or N-I-N junction. An experiment showed that the drain current was suppressed in the cases of P-I-N and N-I-P compared to the cases of P-I-P and N-I-N, and all of the behaviors were consistent with what was expected from the device operation model.