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Shinichi Tojo

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

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preprint2015arXiv

Nuclear spin decoherence of neutral $^{31}$P donors in silicon: Effect of environmental $^{29}$Si nuclei

Spectral diffusion arising from $^{29}$Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on $^{31}$P nuclear spin coherence is measured as a function of $^{29}$Si concentration using X-band pulsed electron nuclear double resonance (ENDOR). The $^{31}$P nuclear spin echo decays show that decoherence is controlled by $^{29}$Si flip-flops resulting in both fast (exponential) and slow (non-exponential) spectral diffusion processes. The decay times span a range from 100 ms in crystals containing 50% $^{29}$Si to 3 s in crystals containing 1% $^{29}$Si. These nuclear spin echo decay times for neutral donors are orders of magnitude longer than those reported for ionized donors in natural silicon. The electron spin of the neutral donors `protects' the donor nuclear spins by suppressing $^{29}$Si flip-flops within a `frozen core', as a result of the detuning of the $^{29}$Si spins caused by their hyperfine coupling to the electron spin.

preprint2011arXiv

Electron spin coherence exceeding seconds in high purity silicon

Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified $^{28}$Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than what can be achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in very pure $^{28}$Si material, with a residual $^{29}$Si concentration of less than 50 ppm and donor densities of $10^{14-15}$ per cm$^3$. We elucidate three separate mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime $T_2$ up to 2 seconds. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ~200 nm. We apply a magnetic field gradient in order to suppress such interactions and obtain an extrapolated electron spin $T_2$ of 10 seconds at 1.8 K. These coherence lifetimes are without peer in the solid state by several orders of magnitude and comparable with high-vacuum qubits, making electron spins of donors in silicon ideal components of a quantum computer, or quantum memories for systems such as superconducting qubits.