BZPEER
More

Discover

About BZPEERSearchGraph

Research tools

HomeCollectionsResearchCollaborationPublish

Network

ExpertsCommunities

Opportunities

Listings

Account

Log inCreate account
Log inCreate account

Source author record

Shinichi Tojo

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

Catalog footprint

Research overview

2works
3topics
4close collaborators

Actions

Is this your work?

Log in to claim
Open graphBrowse papers

Published work

2 publications

preprint2015arXiv

Nuclear spin decoherence of neutral 31^{31}P donors in silicon: Effect of environmental 29^{29}Si nuclei

Spectral diffusion arising from 29^{29}Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on 31^{31}P nuclear spin coherence is measured as a function of 29^{29}Si concentration using X-band pulsed electron nuclear double resonance (ENDOR). The 31^{31}P nuclear spin echo decays show that decoherence is controlled by 29^{29}Si flip-flops resulting in both fast (exponential) and slow (non-exponential) spectral diffusion processes. The decay times span a range from 100 ms in crystals containing 50% 29^{29}Si to 3 s in crystals containing 1% 29^{29}Si. These nuclear spin echo decay times for neutral donors are orders of magnitude longer than those reported for ionized donors in natural silicon. The electron spin of the neutral donors `protects' the donor nuclear spins by suppressing 29^{29}Si flip-flops within a `frozen core', as a result of the detuning of the 29^{29}Si spins caused by their hyperfine coupling to the electron spin.

Open access
preprint2011arXiv

Electron spin coherence exceeding seconds in high purity silicon

Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of an isotopically-purified 28^{28}Si form with no magnetic nuclei overcomes what is a main source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than what can be achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in very pure 28^{28}Si material, with a residual 29^{29}Si concentration of less than 50 ppm and donor densities of 1014−1510^{14-15} per cm3^3. We elucidate three separate mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime T2T_2 up to 2 seconds. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ~200 nm. We apply a magnetic field gradient in order to suppress such interactions and obtain an extrapolated electron spin T2T_2 of 10 seconds at 1.8 K. These coherence lifetimes are without peer in the solid state by several orders of magnitude and comparable with high-vacuum qubits, making electron spins of donors in silicon ideal components of a quantum computer, or quantum memories for systems such as superconducting qubits.

Open access

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.