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Shigenori Ueda

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cond-mat.mtrl-sci cond-mat.mes-hall physics.chem-ph

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preprint2020arXiv

Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass

Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100cm^2/Vs p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (<<1cm^2/Vs) hole mobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higher hole mobility, lacking a well-established understanding of its hole transport properties. Moreover, growth of SnO is complicated by its metastability with respect to SnO2 and Sn, requiring epitaxy for the realization of single crystalline material typically required for high-end applications. Here, we give a comprehensive account on the epitaxial growth of SnO, its (meta)stability, and its thermoelectric transport properties in the context of the present literature. Textured and single-crystalline, unintentionally-doped p-type SnO(001) films are grown by plasma-assisted molecular beam epitaxy. The metastability of this semiconducting oxide is addressed theoretically through an equilibrium phase diagram. Experimentally, the related SnO growth window is rapidly determined by an in-situ growth kinetics study as function of Sn-to-O-plasma flux ratio and growth temperature. The presence of secondary Sn and SnOx (1 < x <= 2) phases is comprehensively studied by different methods, indicating the presence of Sn3O4 or Sn as major secondary phases, as well as a fully oxidized SnO2 film surface. The hole transport properties, Seebeck coefficient, and density-of-states effective mass are determined and critically discussed in the context of the present literature on SnO, considering its anisotropic hole-effective mass.

preprint2015arXiv

Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins

Beta-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that beta-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of beta-BaZn2As2 (previously-reported value ~0.2 eV) is one order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of beta-BaZn2As2 is determined to be 0.23 eV from the intrinsic region of the tem-perature dependence of electrical conductivity. The origins of this narrow bandgap are discussed based on the chemi-cal bonding nature probed by 6 keV hard X-ray photoemission spectroscopy, hybrid density functional calculations, and the ligand theory. One origin is the direct As-As hybridization between adjacent [ZnAs] layers, which leads to a secondary splitting of As 4p levels and raises the valence band maximum. The other is that the non-bonding Ba 5dx2-y2 orbitals form unexpectedly deep conduction band minimum (CBM) in beta-BaZn2As2 although the CBM of LaZnAsO is formed mainly of Zn 4s. These two origins provide a quantitative explanation for the bandgap difference between beta-BaZn2As2 and LaZnAsO.

preprint2014arXiv

Realization of bulk insulating property and carrier manipulation in reversible spin current regime of the ideal topological insulator TlBiSe2

The surfaces of three-dimensional topological insulators (TIs) characterized by a spin-helical Dirac fermion provide a fertile ground for realizing exotic phenomena as well as having potential for wide-ranging applications. To realize most of their special properties, the Dirac point (DP) is required to be located near the Fermi energy with a bulk insulating property while it is hardly achieved in most of the discovered TIs. It has been recently found that TlBiSe2 features an in-gap DP, where upper and lower parts of surface Dirac cone are both utilized. Nevertheless, investigations of the surface transport properties of this material are limited due to the lack of bulk insulating characteristics. Here, we present the first realization of bulk insulating property by tuning the composition of Tl1-xBi1+xSe2-d without introducing guest atoms that can bring the novel properties into the reality. This result promises to shed light on new exotic topological phenomena on the surface.

preprint2013arXiv

Experimental verification of the surface termination in the topological insulator TlBiSe$_{2}$ using core-level photoelectron spectroscopy and scanning tunneling microscopy

The surface termination of the promising topological insulator TlBiSe$_{2}$ has been studied by surface and bulk sensitive probes. Our scanning tunneling microscopy has unmasked for the first time the unusual surface morphology of TlBiSe$_{2}$ obtained by cleaving, where islands are formed by residual atoms on the cleaved plane. The chemical condition of these islands was identified using core-level spectroscopy. We observed thallium core-level spectra that are strongly deformed by a surface component in sharp contrast to the other elements. We propose a simple explanation for this behavior by assuming that the sample cleaving breaks the bonding between thallium and selenium atoms, leaving the thallium layer partially covering the selenium layer. These findings will assist the interpretation of future experimental and theoretical studies on this surface.

preprint2006arXiv

Properties of the quaternary half-metal-type Heusler alloy Co$_2$Mn$_{1-x}$Fe$_x$Si

This work reports on the bulk properties of the quaternary Heusler alloy Co$_2$Mn$_{1-x}$Fe$_x$Si with the Fe concentration $x=$. All samples, which were prepared by arc melting, exhibit $L2_1$ long range order over the complete range of Fe concentration. Structural and magnetic properties of Co$_2$Mn$_{1-x}$Fe$_x$Si Heusler alloys were investigated by means of X-ray diffraction, high and low temperature magnetometry, M{öß}bauer spectroscopy, and differential scanning calorimetry. The electronic structure was explored by means of high energy photo emission spectroscopy at about 8 keV photon energy. This ensures true bulk sensitivity of the measurements. The magnetization of the Fe doped Heusler alloys is in agreement with the values of the magnetic moments expected for a Slater-Pauling like behavior of half-metallic ferromagnets. The experimental findings are discussed on the hand of self-consistent calculations of the electronic and magnetic structure. To achieve good agreement with experiment, the calculations indicate that on-site electron-electron correlation must be taken into account, even at low Fe concentration. The present investigation focuses on searching for the quaternary compound where the half-metallic behavior is stable against outside influences. Overall, the results suggest that the best candidate may be found at an iron concentration of about 50%.