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Shi-shen Yan

Shi-shen Yan contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2016arXiv

Large-gap quantum spin Hall state in functionalized dumbbell stanene

Two-dimensional dumbbell (DB) stanene has been proposed as a promising candidate material for realizing quantum spin Hall effect (QSHE) by Tang et al [P. Tang, P. Chen, W. Cao, H. Huang, S. Cahangirov, L. Xian, Y. Xu, S. C. Zhang, W. Duan, A. Rubio. Phys. Rev. B, 90, 121408 (2014)]. However, the small bulk-gap limits its possible applications at room temperature. Based on first-principles calculations, we predict that its band gap can be enhanced to 148 meV under methyl-functionalization, which can be further tuned by applying lattice strain. The QSHE is confirmed by s-px,y band inversion, topological invariant Z2 = 1, and helical gapless edge within bulk band gap. Notably, the characteristic properties of edge states, such as the large Fermi velocity and Dirac cone, can be modulated by edge modification. The effects of substrates on topological properties are explored when it is grown on various substrates, like SiC, h-BN, and Bi2Te3 sheets. These findings provide significant guidance for future fabrication and realistic applications of QSHE based on stanene in spintronics.

preprint2015arXiv

Functionalized Thallium Antimony Films as Excellent Candidates for Large-Gap Quantum Spin Hall Insulator

Group III-V films are of great importance for their potential application in spintronics and quantum computing. Search for two-dimensional III-V films with a nontrivial large-gap are quite crucial for the realization of dissipationless transport edge channels using quantum spin Hall (QSH) effects. Here we use first-principles calculations to predict a class of large-gap QSH insulators in functionalized TlSb monolayers (TlSbX2; (X = H, F, Cl, Br, I)), with sizable bulk gaps as large as 0.22~0.40 eV. The QSH state is identified by Z2 topological invariant together with helical edge states induced by spin-orbit coupling (SOC). Noticeably, the inverted band gap in the nontrivial states can be effectively tuned by the electric field and strain. Additionally, these films on BN substrate also maintain a nontrivial QSH state, which harbors a Dirac cone lying within the band gap. These findings may shed new light in future design and fabrication of QSH insulators based on two-dimensional honeycomb lattices in spintronics.