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Shashidhara Acharya

Shashidhara Acharya contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Secondary Phase Limited Metal-Insulator Phase Transition in Chromium Nitride Thin Films

Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and corrosion-resistant properties. In recent years, CrN has also attracted significant interest due to its high thermoelectric power factor, and for its unique and intriguing metal-insulator phase transition. While CrN bulk single-crystals exhibit the characteristic metal-insulator transition accompanied with structural (orthorhombic-to-rocksalt) and magnetic (antiferromagnetic-to-paramagnetic) transition at ~260-280K, observation of such phase transition in thin-film CrN has been scarce and highly debated. In this work, the formation of the secondary metallic Cr2N phase during the growth is demonstrated to inhibit the observation of metal-insulator phase transition in CrN thin films. When the Cr-flux during deposition is reduced below a critical limit, epitaxial and stoichiometric CrN thin film is obtained that reproducibly exhibits the phase transition. Annealing of the mixed-phase film inside reducing NH3 environment converts the Cr2N into CrN, and a discontinuity in the electrical resistivity at ~ 277 K appears which supports the underlying hypothesis. A clear demonstration of the origin behind the controversy of the metal-insulator transition in CrN thin films marks significant progress and would enable its nanoscale device realization.

preprint2020arXiv

Strategic improvement of second and third harmonic generation in multifunctional Cu-Sn-S3 ternary semiconducting thin films

We propose a low-cost approach for the synthesis of multifunctional CuSnS3 (CTS) ternary compound thin film via spray pyrolysis technique. By varying Sn and S doping concentrations, a high energy absorber layers of CuSnS3 thin films were deposited on a glass substrate at a substrate temperature of 405 C. The prepared samples were analysed with respect to their optical, structural and electrical and nonlinear optical properties. X-Ray diffraction (XRD) analysis reveals that the films exhibit a tetragonal crystal structure with a preferential growth orientation along (1 1 2). The surface morphology of the films was explored by atomic force microscopy (AFM) in tapping mode configuration. Variation in the carrier charge density and electrical properties were observed for different Sn and S combination. The analysis of the Raman spectra indicates the presence of multiple phases apart from CuSnS3. The obtained Raman spectra were assigned to phonon mode as per zone centre phonon representation of optical and acoustic modes and identified to dominant A symmetry modes. The maximal laser stimulated induced second harmonic generation (SHG) signal was observed for the CTS 3 film and the corresponding second order nonlinear optical susceptibility which was equal to about 0.89 pm/V at 1064 nm and the minimal SHG signal was found for the CTS 2 film (about 0.22 pm/V). This strategic improvement in SHG and third harmonic generation (THG) signal efficiency endorses the role of Sn and S in modulating second and third harmonic generations in CuSnS3 compound.