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Shang Ren

Shang Ren contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Humble planar defects in SiGe nanopillars

We report a new \{001\} planar defect found in SiGe nanopillars. The defect structure, determined by atomic resolution electron microscopy, matches the Humble defect model proposed for diamond. We also investigated several possible variants of the Humble structure using first principles calculations and found that the one lowest in energy was also in best agreement with the STEM images. The pillar composition has been analyzed with electron energy loss spectroscopy, which hints at how the defect is formed. Our results show that the structure and formation process of defects in nanostructured group IV semiconductors can be different from their bulk counterparts.

preprint2021arXiv

Quadrupole moments, edge polarizations, and corner charges in the Wannier representation

The modern theory of polarization allows for the determination of the macroscopic end charge of a truncated one-dimensional insulator, modulo the charge quantum $e$, from a knowledge of bulk properties alone. A more subtle problem is the determination of the corner charge of a two-dimensional insulator, modulo $e$, from a knowledge of bulk and edge properties alone. While previous works have tended to focus on the quantization of corner charge in the presence of symmetries, here we focus on the case that the only bulk symmetry is inversion, so that the corner charge can take arbitrary values. We develop a Wannier-based formalism that allows the corner charge to be predicted, modulo $e$, only from calculations on ribbon geometries of two different orientations. We elucidate the dependence of the interior quadrupole and edge dipole contributions upon the gauge used to construct the Wannier functions, finding that while these are individually gauge-dependent, their sum is gauge-independent. From this we conclude that the edge polarization is not by itself a physical observable, and that any Wannier-based method for computing the corner charge requires the use of a common gauge throughout the calculation. We satisfy this constraint using two Wannier construction procedures, one based on projection and another based on a gauge-consistent nested Wannier construction. We validate our theory by demonstrating the correct prediction of corner charge for several tight-binding models. We comment on the relations between our approach and previous ones that have appeared in the literature.