Researcher profile

Shan Shen

Shan Shen contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2026arXiv

OpenACM: An Open-Source SRAM-Based Approximate CiM Compiler

The rise of data-intensive AI workloads has exacerbated the ``memory wall'' bottleneck. Digital Compute-in-Memory (DCiM) using SRAM offers a scalable solution, but its vast design space makes manual design impractical, creating a need for automated compilers. A key opportunity lies in approximate computing, which leverages the error tolerance of AI applications for significant energy savings. However, existing DCiM compilers focus on exact arithmetic, failing to exploit this optimization. This paper introduces OpenACM, the first open-source, accuracy-aware compiler for SRAM-based approximate DCiM architectures. OpenACM bridges the gap between application error tolerance and hardware automation. Its key contribution is an integrated library of accuracy-configurable multipliers (exact, tunable approximate, and logarithmic), enabling designers to make fine-grained accuracy-energy trade-offs. The compiler automates the generation of the DCiM architecture, integrating a transistor-level customizable SRAM macro with variation-aware characterization into a complete, open-source physical design flow based on OpenROAD and the FreePDK45 library. This ensures full reproducibility and accessibility, removing dependencies on proprietary tools. Experimental results on representative convolutional neural networks (CNNs) demonstrate that OpenACM achieves energy savings of up to 64\% with negligible loss in application accuracy. The framework is available on \href{https://github.com/ShenShan123/OpenACM}{OpenACM:URL}

preprint2022arXiv

A Timing Yield Model for SRAM Cells in Sub/Near-threshold Voltages Based on A Compact Drain Current Model

Sub/Near-threshold static random-access memory (SRAM) design is crucial for addressing the memory bottleneck in energy-constrained applications. However, the high integration density and reliability under process variations demand an accurate estimation of extremely small failure probabilities. To capture such a rare event in memory circuits, the time and storage overhead of conventional Monte Carlo (MC) simulations cannot be tolerated. On the other hand, classic analytical methods predicting failure probabilities from a physical expression become inaccurate in the sub/near-threshold region due to the assumed distribution or the oversimplified drain current model for nanoscale devices. This work first proposes a simple but efficient drain current model to describe the drain-induced barrier lowering effect at low voltages. Based on that, the probability density functions of the interest metrics in SRAM are derived. Two analytical models are then put forward to evaluate SRAM dynamic stabilities including access and write-time failures. The proposed models can be extended easily to different types of SRAM with different read/write assist circuits. The models are validated against MC simulations across different operating voltages and temperatures. The average relative errors at 0.5V VDD are only 8.8% and 10.4% for the access-time and write failure models respectively. The size of required data samples is 43.6X smaller than that of the state-of-the-art method.