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Shalini Tripathi

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2 published item(s)

preprint2021arXiv

Recurrent Neural Network Assisted Transmitter Selection for Secrecy in Cognitive Radio Network

In this paper, we apply the long short-term memory (LSTM), an advanced recurrent neural network based machine learning (ML) technique, to the problem of transmitter selection (TS) for secrecy in an underlay small-cell cognitive radio network with unreliable backhaul connections. The cognitive communication scenario under consideration has a secondary small-cell network that shares the same spectrum of the primary network with an agreement to always maintain a desired outage probability constraint in the primary network. Due to the interference from the secondary transmitter common to all primary transmissions, the secrecy rates for the different transmitters are correlated. LSTM exploits this correlation and matches the performance of the conventional technique when the number of transmitters is small. As the number grows, the performance degrades in the same manner as other ML techniques such as support vector machine, $k$-nearest neighbors, naive Bayes, and deep neural network. However, LSTM still significantly outperforms these techniques in misclassification ratio and secrecy outage probability. It also reduces the feedback overhead against conventional TS.

preprint2020arXiv

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase. In this work, the segregation of Ge in a Ge2Sb2Te5 film of 30 nm thickness during heating inside the transmission electron microscope was observed and characterized. The Ge2Sb2Te5 film was deposited using sputtering on a Protochips Fusion holder and left uncapped in atmosphere for about four months. Oxygen incorporated within the film played a significant role in the chemical segregation observed which resulted in amorphous Ge-O grain boundaries and Sb and Te rich crystalline domains. Such composition changes can occur when the phase-change material interfaces insulating oxide layers in an integrated device and would significantly impact its electrical and thermal properties.