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Shai Levy

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cond-mat.mtrl-sci cond-mat.mes-hall physics.chem-ph

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preprint2026arXiv

Size Dependent Ternary Halide Solid Solutions in Perovskite Nanocrystals

Crystalline solid solutions incorporate guest atoms by substituting host lattice sites up to a solubility limit dictated by solute host similarity. Solid solutions enable tuning various material properties, such as the optoelectronic behavior of halide perovskites. In bulk, incompatibility of Cl:I halide mixtures restricts exploration throughout the ternary halide Cl:Br:I compositional range. However, solubility is extended in nanocrystals which better accommodate a wider range of ions within their lattice. Through high throughput synthesis and spectroscopic characterization of over 3000 samples, along with density functional theory and cluster expansion models, we determine the solubility boundaries of ternary halide perovskite nanocrystals and demonstrate their extended size dependent miscibility. Smaller nanocrystals, with sufficient Br content, stabilize the Cl:Br:I solid solutions, suppress planar stacking fault defects and prevent halide segregation.

preprint2009arXiv

Influence of Ge nanocrystals and radiation defects on C-V characteristics in Si-MOS structures

Metal-Oxide-Semiconductor (MOS) structures containing 74Ge nanocrystals (NC-Ge) imbedded inside the SiO_2 layer were studied for their capacitance characterization. Ge atoms were introduced by implantation of 74Ge+ ions with energy of 150 keV into relatively thick (~640nm) amorphous SiO_2 films. The experimental characterization included room temperature measurements of capacitance-voltage (C-V) dependences at high frequencies (100 kHz and 1 MHz). Four groups of MOS structures have been studied: The 1st - "initial" samples, without Ge atoms (before ion implantation). The 2nd - "implanted" samples, after Ge+ ion implantation but before annealing, with randomly distributed Ge atoms within the struggle layer. The 3rd - samples after formation of Ge nanocrystals by means of annealing at 800 degree C ("NC-Ge" samples), and the 4th - "final" samples: NC-Ge samples that were subjected by an intensive neutron irradiation in a research nuclear reactor with the integral dose up to 10^20 neutrons/cm^2 followed by the annealing of radiation damage. It is shown that in "initial" samples, the C-V characteristics have a step-like form of "S-shape", which is typical for MOS structures in the case of high frequency. However, in "implanted" and "NC-Ge" samples, C-V characteristics have "U-shape" despite the high frequency operation, In addition, "NC-Ge" samples exhibit a large hysteresis which may indicate charge trapping at the NC-Ge. Combination of the "U-shape" and hysteresis characteristics allows us to suggest a novel 4-digits memory retention unit. "Final" samples indicate destruction of the observed peculiarities of C-V characteristics and recurrence to the C-V curve of "initial" samples.