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Shabnam

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cond-mat.mtrl-sci

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preprint2011arXiv

Film Thickness controlled photoluminescence Emission in ZnO:Si Nano-composites

As grown ZnO:Si nanocomposite films fabricated by thermal evaporation showed broad photoluiminescence (PL) spectra due to merging of four prominent peaks viz 370, 410, 470 and 520 nm. Investigations revealed the role of interface in contributing to the two blue peaks at 410 and 470 nm. While the 470 nm is found to vary with ZnO grain size and their density, the 410 nm peak is attributed to the volume of shell surrounding ZnO nanoparticles. This study shows the contribution of ZnO cluster size and their density, as influenced by film thickness, in the PL spectra of the samples.

preprint2011arXiv

White-Light Emission from Annealed ZnO:Si Nanocomposite Thin Films

As grown ZnO:Si nanocomposites of different compositional ratios were fabricated by thermal evaporation techniques. These films were subjected to post deposition annealing under high vacuum at a temperature of $\rm 250C^o$ for 90min. The photoluminescence (PL) spectra of annealed samples have shown marked improvements both in terms of intensity and broadening. For the first time in ZnO:Si nanocomposite films we see huge UV, red and orange peaks at 310, 570 and 640nm. Structural and Raman analysis show formation of a Zn-Si-O shell around ZnO nano clusters wherein on heating $\rm Zn_2SiO_4$ compound forms. The new emissions are due to $\rm Zn_2SiO_4$ which completes white light spectrum.

preprint2010arXiv

Size and Defect related Broadening of Photoluminescence Spectra in ZnO:Si Nanocomposite Films

Nanocomposite films of Zinc Oxide and Silicon were grown by thermal evaporation technique using varying ratios of ZnO:Si in the starting material. Analysis reveal the role of ZnO and amorphous silicon interface in contributing to relatively less common blue photoluminescence emissions (at $\sim$ 400 and 470nm). These blue peaks are observed along with the emissions resulting from band edge transition (370nm) and those related to defects (522nm) of ZnO. Careful analysis shows that along with the grain size of ZnO, a suitable compositional ratio (of ZnO to silicon) is critical for the coexistence of all the four peaks. Proper selection of conditions can give comparable photoluminescence peak intensities leading to broad-band emission.