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Researcher profile

Seul-Ki Bac

Seul-Ki Bac contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conquant-ph

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Published work

3 published item(s)

preprint2021arXiv

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

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preprint2021arXiv

Fermi level tuning and band alignment in Mn doped InAs/GaSb

InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films

Topological superconductors have attracted tremendous excitement as they are predicted to host Majorana zero modes that can be utilized for topological quantum computing. Candidate topological superconductor Sn1-xInxTe thin films (0<x<0.3) grown by molecular beam epitaxy and strained in the (111) plane are shown to host three coexisting quantum effects: localization, antilocalization and superconducting fluctuations above the critical temperature Tc. An analysis of the normal state magnetoresistance reveals these effects. Weak localization is consistently observed in superconducting samples, indicating that superconductivity originates dominantly from trivial valence band states that may be strongly spin-orbit split. A large enhancement of the conductivity is observed above Tc, indicating that quantum coherent quasiparticle effects coexist with superconducting fluctuations. Our results motivate a re-examination of the debated pairing symmetry of this material when subjected to quantum confinement and lattice strain.

0 citations0 reviewsNo code linkedOpen access