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Serhii Kryvyi

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Published work

2 published item(s)

preprint2023arXiv

Reconstruction of three-dimensional strain field in an asymmetrical curved core-shell hetero-nanowire

Crystal orientation and strain mapping of an individual curved and asymmetrical core-shell hetero-nanowire is performed based on transmission electron microscopy. It relies on a comprehensive analysis of scanning nanobeam electron diffraction data obtained for 1.3 nm electron probe size. The proposed approach handles also the problem of appearing twinning defects on diffraction patterns and allows for investigation of materials with high defect densities. On the basis of the experimental maps and their comparison to finite element simulations, a hidden core-shell geometry and full three-dimensional strain distribution within the curved core-shell nanowire are obtained. As effect, a low-dose quasi-tomography data using only single zone axis diffraction experiment is received. Our approach is applicable also for electron beam sensitive materials for which performing conventional tomography is a difficult task.

preprint2022arXiv

Bi Incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.