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Source author record

Sérgio L. Morelhão

Sérgio L. Morelhão appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2020arXiv

Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators

Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth parameters have drastic effects on structural and electronic properties of the films. Recently [J. Phys. Chem. C 2019, 123, 24818-24825], a detailed investigation has been performed on the dynamics of defects in epitaxial films of this material, revealing the impact of film/substrate lattice misfit on the films' lateral coherence. Very small lattice misfit (<0.05%) are expected to have no influence on quality of epitaxial system with atomic layers weakly bonded to each other by van der Waals forces, contrarily to what was observed. In this work, we investigate the correlation between lattice misfit and size and morphology of the film crystalline domains. Three-dimensional reciprocal-space maps of film Bragg reflections obtained with synchrotron X-rays are used to visualize the spatial conformation of the crystallographic domains through film thickness, while atomic force microscopy images provide direct information of the domains morphology at the film surface.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Phonon Scattering Mechanism in Thermoelectric Materials Revised via Resonant X-ray Dynamical Diffraction

Engineering of thermoelectric materials requires an understanding of thermal conduction by lattice and electronic degrees of freedom. Filled skutterudites denote a large family of materials suitable for thermoelectric applications where reduced lattice thermal conduction attributed to localized low-frequency vibrations (rattling) of filler cations inside large cages of the structure. In this work, a multi-wavelength method of exploiting X-ray dynamical diffraction in single crystals of CeFe$_4$P$_{12}$ is presented and applied to resolve the atomic amplitudes of vibrations. The results suggest that the vibrational dynamics of the whole filler-cage system is the actual active mechanism behind the optimization of thermoelectric properties.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Hybrid reciprocal lattice: application to layer stress appointment in GaAlN/GaN(0001) systems with patterned substrates

Epitaxy of semiconductors is a process of tremendous importance in applied science and optoelectronic industry. Controlling of defects introduced during epitaxial growth is a key point in manufacturing devices of high efficiency and durability. In this work, we demonstrate how useful hybrid reflections are on the study of epitaxial structures with anisotropic strain gradients due to patterned substrates. High accuracy to detect and distinguish elastic and plastic relaxations are one of the greatest advantages of measuring this type of reflection, as well as the fact that it can be exploited in symmetrical reflection geometry on a commercial high-resolution diffractometer.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis

Topological insulator surface properties are strongly correlated to structural properties, requiring high-resolution techniques capable of probing both surface and bulk structures at once. In this work, high flux of synchrotron source, recursive equations for fast X-ray dynamical diffraction simulation, and genetic algorithm for data fitting are combined to reveal the detailed structure of bismuth telluride epitaxic films with thickness ranging from 8 to 168 nm. It includes stacking sequences, thickness and composition of layers in model structures, interface coherence, surface termination and morphology. These results are in agreement with the surface morphology determined by atomic force microscopy. Moreover, by using X-ray data from zero noise area detector to construct three-dimensional reciprocal space maps, insights into the nanostructure of domains and stacking faults in Bi2Te3 films are given.

0 citations0 reviewsNo code linkedOpen access