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Sergio Bietti

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph

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preprint2021arXiv

Optically controlled dual-band quantum dot infrared photodetector

We present the design for a novel type of dual-band photodetector in the thermal infrared spectral range, the Optically Controlled Dual-band quantum dot Infrared Photodetector (OCDIP). This concept is based on a quantum dot ensemble with a unimodal size distribution, whose absorption spectrum can be controlled by optically-injected carriers. An external pumping laser varies the electron density in the QDs, permitting to control the available electronic transitions and thus the absorption spectrum. We grew a test sample which we studied by AFM and photoluminescence. Based on the experimental data, we simulated the infrared absorption spectrum of the sample, which showed two absorption bands at 5.85 um and 8.98 um depending on the excitation power.

preprint2020arXiv

Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A

We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 °C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizeable reduction of the island density. An additional, reentrant increasing behavior is observed below 80 °C. We attribute the above complex behavior to the liquid-solid phase transition and to the complex island-island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 °C have a face-centered cubic crystal structure.

preprint2015arXiv

Germanium-based quantum emitters for time-reordering entanglement scheme with degenerate exciton and biexciton states

We address the photoluminescence emission of individual germanium extrinsic centers in Al_0.3Ga0.7As epilayers grown on germanium substrates. Through a thorough analysis of micro-photoluminescence experiments we demonstrate the capability of high temperature emission (70 K) and multiexcitonic features (neutral exciton X, biexciton XX, positive X+ and negative X- charged exciton) of these quantum emitters. Finally, we investigate the renormalization of each energy level showing a large and systematic change of the binding energy of XX and X+ from positive to negative values (from ~+5 meV up to ~-7 meV covering about ~ 70 meV of the emission energy) with increasing quantum confinement. These light emitters exhibiting energy-degenerate X and XX energy levels at ~1.855 eV (680 nm) are a promising resource for the generation of entangled photons in the time-reordering scheme on a silicon platform.

preprint2013arXiv

A unified model of droplet epitaxy for compound semiconductor nanostructures: experiments and theory

We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures observed during droplet epitaxy. The crucial features of the model include the explicit and independent representation of atoms with different species and the ability to treat solid and liquid phases independently. Using this model, we examine nanostructural evolution in droplet epitaxy. The model faithfully captures several of the experimentally observed structures, including compact islands and nanorings. Moreover, simulations show the presence of Ga/GaAs core-shell structures that we validate experimentally. A fully analytical model of droplet epitaxy that explains the relationship between growth conditions and the resulting nanostructures is presented, yielding key insight into the mechanisms of droplet epitaxy.