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Researcher profile

Senlei Li

Senlei Li contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

4 published item(s)

preprint2022arXiv

Electric-Field-Induced Coherent Control of Nitrogen Vacancy Centers

Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-controlled magnetic anisotropy, we report coherent manipulation of nitrogen-vacancy (NV) centers by the spatially confined magnetic stray fields produced by a proximate resonant magnetic tunnel junction (MTJ). Remarkably, the coherent coupling between NV centers and the MTJ can be systematically controlled by a DC bias voltage, allowing for appreciable electrical tunability in the presented hybrid system. In comparison with current state-of-the-art techniques, the demonstrated NV-based quantum operational platform exhibits significant advantages in scalability, device compatibility, and energy-efficiency, further expanding the role of NV centers in a broad range of quantum computing, sensing, and communications applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum sensing and imaging of spin-orbit-torque-driven spin dynamics in noncollinear antiferromagnet Mn3Sn

Novel noncollinear antiferromagnets with spontaneous time-reversal symmetry breaking, nontrivial band topology, and unconventional transport properties have received immense research interest over the past decade due to their rich physics and enormous promise in technological applications. One of the central focuses in this emerging field is exploring the relationship between the microscopic magnetic structure and exotic material properties. Here, the nanoscale imaging of both spin-orbit-torque-induced deterministic magnetic switching and chiral spin rotation in noncollinear antiferromagnet Mn3Sn films using nitrogen-vacancy (NV) centers is reported. Direct evidence of the off-resonance dipole-dipole coupling between the spin dynamics in Mn3Sn and proximate NV centers is also demonstrated with NV relaxometry measurements. These results demonstrate the unique capabilities of NV centers in accessing the local information of the magnetic order and dynamics in these emergent quantum materials and suggest new opportunities for investigating the interplay between topology and magnetism in a broad range of topological magnets.

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preprint2021arXiv

Wide Field Imaging of van der Waals Ferromagnet Fe3GeTe2 by Spin Defects in Hexagonal Boron Nitride

Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking advantage of boron vacancy spin defects in hBN, we report nanoscale quantum imaging of low-dimensional ferromagnetism sustained in Fe3GeTe2/hBN van der Waals heterostructures. Exploiting spin relaxometry methods, we have further observed spatially varying magnetic fluctuations in the exfoliated Fe3GeTe2 flake, whose magnitude reaches a peak value around the Curie temperature. Our results demonstrate the capability of spin defects in hBN of investigating local magnetic properties of layered materials in an accessible and precise way, which can be extended readily to a broad range of miniaturized van der Waals heterostructure systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Non-local Chemical Potential Modulation in Topological Insulators Via Electric Field Driven Trapped Charge Migration

Topological insulators (TIs) host unusual surface states with Dirac dispersion and helical spin texture and hold high potentials for novel applications in spintronics and quantum computing. Control of the chemical potential in these materials is challenging but crucial to realizing the hotly pursued exotic physics, including efficient spin generation1,2, Majorana Fermions3-5, and exciton condensation6,7. Here we report a simple and effective method that can in-situ tune the chemical potential of single-crystal Bi2-xSbxSe3 nanoribbons, with a magnitude significantly larger than traditional electrostatic gating. An electric field parallel to a device channel can shift the chemical potential across the Dirac point, both inside and outside the channel. We attribute this non-local reversible modulation of chemical potential to electric-field-induced charge hopping among defect states, further supported by photocurrent mapping. Our approach enables engineering chemical potential distributions in TIs and opens up tremendous opportunities for investigating fundamental transport mechanisms of charge and composite particles in these materials.

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