Researcher profile

Selman Hershfield

Selman Hershfield contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

Non-linear thermoelectric transport: A class of nano-devices for high efficiency and large power output

Molecular junctions and similar devices described by an energy dependent transmission coefficient can have a high linear response thermoelectric figure of merit. Since such devices are inherently non-linear, the full thermodynamic efficiency valid for any temperature and chemical potential difference across the leads is calculated. The general features in the energy dependence of the tranmission function that lead to high efficiency and also high power output are determined. It is shown that the device with the highest efficiency does not necessarily lead to large power output. To illustrate this, we use a model called the t-stub model representing tunneling through an energy level connected to another energy level. Within this model both high efficiency and high power output are achievable. Futhermore, by connecting many nanodevices it is shown to be possible to scale up the power output without compromising efficiency in an (exactly solvable) n-channel model even with tunneling between the devices.

preprint2002arXiv

Resistance of multilayers with long length scale interfacial roughness

The resistance of multilayers with interface roughness on a length scale which is large compared to the atomic spacing is computed in several cases via the Boltzmann equation. This type of roughness is common in magnetic multilayers. When the electronic mean free paths are small compared to the layer thicknesses, the current flow is non-uniform, and the resistance decreases in the Current-Perpendicular-to-Plane (CPP) configuration and increases in the Current-In-Plane (CIP) configuration. For mean free paths much longer than the layer thicknesses, the current flow is uniform, and the resistance increases in both the CPP and CIP configurations due to enhanced surface scattering. In both the CPP and CIP geometries, the giant magnetoresistance can be either enhanced or reduced by the presence of long length scale interface roughness depending on the parameters. Finally, the changes in the CPP and CIP resistivities due to increasing interface roughness are estimated using experimentally determined parameters.