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Seho Yi

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6 publications

preprint2020arXiv

Origin of enhanced chemical precompression in cerium hydride CeH9_{9}

The rare-earth metal hydrides with clathrate structures have been highly attractive because of their promising high-TcT_{\rm c} superconductivity at high pressure. Recently, cerium hydride CeH9_9 composed of Ce-encapsulated clathrate H cages was synthesized at much lower pressures of 80−-100 GPa, compared to other experimentally synthesized rare-earth hydrides such as LaH10_{10} and YH6_6. Based on density-functional theory calculations, we find that the Ce 5pp semicore and 4ff/5dd valence states strongly hybridize with the H 1ss state, while a transfer of electrons occurs from Ce to H atoms. Further, we reveal that the delocalized nature of Ce 4ff electrons plays an important role in the chemical precompression of clathrate H cages. Our findings not only suggest that the bonding nature between the Ce atoms and H cages is characterized as a mixture of ionic and covalent, but also have important implications for understanding the origin of enhanced chemical precompression that results in the lower pressures required for the synthesis of CeH9_9.

preprint2020arXiv

Stabilization mechanism of clathrate H cages in a room-temperature superconductor LaH10_{10}

Lanthanum hydride LaH10_{10} with a sodalitelike clathrate structure was experimentally realized to exhibit a room-temperature superconductivity under megabar pressures. Based on first-principles calculations, we reveal that the metal framework of La atoms has the excess electrons at interstitial regions. Such anionic electrons are easily captured to form a stable clathrate structure of H cages. We thus propose that the charge transfer from La to H atoms is mostly driven by the electride property of the La framework. Further, the interaction between La atoms and H cages induces a delocalization of La-5pp semicore states to hybridize with H-1ss state. Consequently, the bonding nature between La atoms and H cages is characterized as a mixture of ionic and covalent. Our findings demonstrate that anionic and semicore electrons play important roles in stabilizing clathrate H cages in LaH10_{10}, which can be broadly applicable to other high-pressure rare-earth hydrides with clathrate structures.

preprint2019arXiv

Multiband Nature of the Room-Temperature Superconductivity in Compressed LaH10_{10}

Recently, the discovery of room-temperature superconductivity (SC) was experimentally realized in the fcc phase of LaH10_{10} under megabar pressures. This SC of compressed LaH10_{10} has been explained in terms of strong electron-phonon coupling (EPC), but the mechanism of how the large EPC constant and high superconducting transition temperature TcT_{\rm c} are attained has not yet been clearly identified. Based on the density-functional theory and the Migdal-Eliashberg formalism, we reveal the presence of two nodeless, anisotropic superconducting gaps on the Fermi surface (FS). Here, the small gap is mostly associated with the hybridized states of H ss and La ff orbitals on the three outer FS sheets, while the large gap arises mainly from the hybridized state of neighboring H ss or pp orbitals on the one inner FS sheet. Further, we find that the EPC constant of compressed YH10_{10} with the same sodalite-like clathrate structure is enhanced due to the two additional FS sheets, leading to a higher TcT_{\rm c} than LaH10_{10}. It is thus demonstrated that the multiband pairing of hybridized electronic states is responsible for the large EPC constant and room-temperature SC in compressed hydrides LaH10_{10} and YH10_{10}.

preprint2016arXiv

Mott- versus Slater-type Insulating Nature of Two-Dimensional Sn Atom Lattice on SiC(0001)

Semiconductor surfaces with narrow surface bands provide unique playgrounds to search for Mott-insulating state. Recently, a combined experimental and theoretical study [Phys. Rev. Lett. 114, 247602 (2015)] of the two-dimensional (2D) Sn atom lattice on a wide-gap SiC(0001) substrate proposed a Mott-type insulator driven by strong on-site Coulomb repulsion U. Our systematic density-functional theory (DFT) study with local, semilocal, and hybrid exchange-correlation functionals shows that the Sn dangling-bond state largely hybridizes with the substrate Si 3p and C 2p states to split into three surface bands due to the crystal field. Such a hybridization gives rise to the stabilization of the antiferromagnetic order via superexchange interactions. The band gap and the density of states predicted by the hybrid DFT calculation agree well with photoemission data. Our findings not only suggest that the Sn/SiC(0001) system can be represented as a Slater-type insulator driven by long-range magnetism, but also have an implication that taking into account long-range interactions beyond the on-site interaction would be of importance for properly describing the insulating nature of Sn/SiC(0001).

preprint2016arXiv

Spin-orbit coupling effects on the stability of two competing structures in Pb/Si(111) and Pb/Ge(111)

Using first-principles density-functional theory (DFT) calculations, we investigate the 4/3-monolayer structure of Pb on the Si(111) or Ge(111) surface within the two competing structural models termed the H3_3 and T4_4 structures. We find that the spin-orbit coupling (SOC) influences the relative stability of the two structures in both the Pb/Si(111) and Pb/Ge(111) systems: i.e., our DFT calculation without including the SOC predicts that the T4_4 structure is energetically favored over the H3_3 structure by ΔEΔE = 25 meV for Pb/Si(111) and 22 meV for Pb/Ge(111), but the inclusion of SOC reverses their relative stability as ΔEΔE = −-12 and −-7 meV, respectively. Our analysis shows that the SOC-induced switching of the ground state is attributed to a more asymmetric surface charge distribution in the H3_3 structure, which gives rise to a relatively larger Rashba spin splitting of surface states as well as a relatively larger pseudo-gap opening compared to the T4_4 structure. By the nudged elastic band calculation, we obtain a sizable energy barrier from the H3_3 to the T4_4 structure as ∼{\sim}0.59 and ∼{\sim}0.27 eV for Pb/Si(111) and Pb/Ge(111), respectively. It is thus likely that the two energetically competing structures can coexist at low temperatures.

preprint2016arXiv

Stacking-sequence-independent band structure and shear exfoliation of two-dimensional electride materials

The electronic band structure of crystals is generally influenced by the periodic arrangement of their constituent atoms. Specifically, the emerging two-dimensional (2D) layered structures have shown different band structures with respect to their stacking configurations. Here, based on first-principles density-functional theory calculations, we demonstrate that the band structure of the recently synthesized 2D Ca2_2N electride changes little for the stacking sequence as well as the lateral interlayer shift. This intriguing invariance of band structure with respect to geometrical variations can be attributed to a complete screening of [Ca2_2N]+^{+} cationic layers by anionic excess electrons delocalized between the cationic layers. The resulting weak interactions between 2D dressed cationic layers give rise to not only a shallow potential barrier for bilayer sliding but also an electron-doping facilitated shear exfoliation. Our findings open a route for exploration of the peculiar geometry-insensitive electronic properties in 2D electride materials, which will be useful for future thermally stable electronic applications.

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