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Researcher profile

Sedat Dogan

Sedat Dogan contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2015arXiv

Photovoltaic effect in individual asymmetrically contacted lead sulfide nanosheets

Solution-processable, two-dimensional semiconductors are promising optoelectronic materials which could find application in low-cost solar cells. Lead sulfide nanocrystals raised attention since the effective band gap can be adapted over a wide range by electronic confinement and observed multi-exciton generation promises higher efficiencies. We report on the influence of the contact metal work function on the properties of transistors based on individual two-dimensional lead sulfide nanosheets. Using palladium we observed mobilities of up to 31 cm2/Vs. Furthermore, we demonstrate that asymmetrically contacted nanosheets show photovoltaic effect and that the nanosheets' height has a decisive impact on the device performance. Nanosheets with a thickness 5.4 nm contacted with platinum and titanium show a power conversion efficiency of up to 0.94 % (EQE 75.70 %). The results underline the high hopes put on such materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tailoring the height of ultrathin PbS nanosheets and their application as field-effect transistors

Two-dimensional, solution-processable semiconductor materials are anticipated to be used in low-cost electronic applications, such as transistors and solar cells. Here, lead sulfide nanosheets with a lateral size of several microns are synthesized and it is shown how their height can be tuned by the variation of the ligand concentrations. As a consequence of the adjustability of the nanosheets' height between 2 to more than 20 nm charge carriers are in confinement, which has a decisive impact on their electronic properties. This is demonstrated by their use as conduction channel in a field-effect transistor. The experiments show that the performance in terms of current, On/Off ratio, and sub-threshold swing is tunable over a large range.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Virtually Bare Nanocrystal Surfaces - Significantly Enhanced Electrical Transport in CuInSe2 and CuIn(1-x)Ga(x)Se2 Thin Films upon Ligand Exchange with Thermally Degradable 1-Ethyl-5-thiotetrazole

We present a facile and safe ligand exchange method for readily synthesized CuInSe2 (CIS) and CuIn(1-x)Ga(x)Se2 (CIGS) nanocrystals (NCs) from oleylamine to 1-ethyl-5-thiotetrazole which preserves the colloidal stability of the chalcopyrite structure. 1-ethyl-5-thiotetrazole as thermally degradable ligand is adapted for the first time for trigonal pyramidal CIS NCs (18 nm), elongated CIS NCs (9 nm) and CIGS NCs (6 nm). The exchanged NC solutions are spin-coated onto Si/SiO2 substrates with predefined gold electrodes to yield ordered NC thin films. These films are thermally annealed at 260 C to completely remove 1-ethyl-5-thiotetrazol leaving virtually bare NC surfaces. We measure the current-voltage characteristics of the NC solids prior to ligand thermolysis in the dark and under illumination and after thermolysis of the ligand in the same manner. The conductivity of trigonal pyramidal CIS NCs increases by four orders of magnitude from 1.4*10E-9 S/cm in the dark to 1.4*10E-5 S/cm for ligand-free illuminated NC films. Elongated CIS NC films show an increase by three orders of magnitude and CIGS NC films exhibit improved conductivity by two orders of magnitude. The degree of conductivity enhancement thereby depends on the NC size accentuating the role of trap-states and internal grain boundaries in ligand-free NC solids for electrical transport. Our approach offers for the first time the possibility to address chalcopyrite materials' electrical properties in a virtually ligand-free state.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Adhesion and size dependent friction anisotropy in boron nitride nanotubes

The frictional properties of individual multiwalled boron nitride nanotubes (BN-NTs) synthesized by chemical vapor deposition (CVD) and deposited on a silicon substrate are investigated using an atomic force microscope tip sliding along (longitudinal sliding) and across (transverse sliding) the tube's principal axis. Because of the tube transverse deformations during the tip sliding, a larger friction coefficient is found for the transverse sliding as compared to the longitudinal sliding. Here, we show that the friction anisotropy in BN-NTs, defined as the ratio between transverse and longitudinal friction forces per unit area, increases with the nanotube-substrate contact area. Larger contact area denotes stronger surface adhesion, resulting in a longitudinal friction coefficient closer to the value expected in absence of transverse deformations. Compared to carbon nanotubes (C-NT), BN-NTs display a friction coefficient in each sliding direction with intermediate values between CVD and arc discharge C-NTs. CVD BN-NTs with improved tribological properties and higher oxidation temperature might be a better candidate than CVD C-NTs for applications in extreme environments.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Field-effect transistors made of individual colloidal PbS nanosheets

Two-dimensional materials are considered for future quantum devices and are usually produced by extensive methods like molecular beam epitaxy. We report on the fabrication of field-effect transistors using individual ultra-thin lead sulfide nanostructures with lateral dimensions in the micrometer range and a height of a few nanometers as conductive channel produced by a comparatively fast, inexpensive, and scalable colloidal chemistry approach. Contacted with gold electrodes, such devices exhibit p-type behavior and temperature-dependent photoconductivity. Trap states play a crucial role in the conduction mechanism. The performance of the transistors is among the ones of the best devices based on colloidal nanostructures.

0 citations0 reviewsNo code linkedOpen access