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Sebastian Weidt

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Published work

2 published item(s)

preprint2020arXiv

Efficient Qubit Routing for a Globally Connected Trapped Ion Quantum Computer

The cost of enabling connectivity in Noisy-Intermediate-Scale-Quantum devices is an important factor in determining computational power. We have created a qubit routing algorithm which enables efficient global connectivity in a previously proposed trapped ion quantum computing architecture. The routing algorithm was characterized by comparison against both a strict lower bound, and a positional swap based routing algorithm. We propose an error model which can be used to estimate the achievable circuit depth and quantum volume of the device as a function of experimental parameters. We use a new metric based on quantum volume, but with native two qubit gates, to assess the cost of connectivity relative to the upper bound of free, all to all connectivity. The metric was also used to assess a square grid superconducting device. We compare these two architectures and find that for the shuttling parameters used, the trapped ion design has a substantially lower cost associated with connectivity.

preprint2020arXiv

Engineering of Microfabricated Ion Traps and Integration of Advanced On-Chip Features

Trapped atomic ions are a proven and powerful tool for the fundamental research of quantum physics. They have emerged in recent years as one of the most promising candidates for several practical technologies including quantum computers, quantum simulators, atomic clocks, mass spectrometers and quantum sensors. Advanced fabrication techniques, taken from established and nascent disciplines, are being deployed to create novel, reliable devices with a view to large scale integration and commercial compatibility. This review will cover the fundamentals of ion trapping before proceeding with a discussion of the design of ion traps for the aforementioned applications. We will analyse current microfabrication techniques that are being utilised, as well as various considerations which motivate the choice of materials and processes. Finally, we discuss current efforts to include advanced, on-chip features into next generation ion traps.