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Sebastian Meier

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Published work

2 published item(s)

preprint2020arXiv

Low-frequency Raman scattering in WSe$_2$-MoSe$_2$ heterobilayers: Evidence for atomic reconstruction

We investigate WSe$_2$-MoSe$_2$ heterobilayers with different twist angles $θ\pm δ$ between the two layers, by low-frequency Raman scattering. In sufficiently aligned samples with $θ=0^\circ$, or $θ=60^\circ$, and $δ\lesssim 3^\circ$, we observe an interlayer shear mode (ISM), which is a clear sign of a commensurate bilayer structure, i.e., the layers must undergo an atomic reconstruction to form R-type or H-type stacking orders. We find slightly different ISM energies of about 18~cm$^{-1}$ and 17~cm$^{-1}$ for H-type and R-type reconstructions, respectively, independent of the exact value of $θ\pm δ$. Our findings are corroborated by the fact that the ISM is not observed in samples with twist angles, which deviate by $δ> 3^\circ$ from $0^\circ$ or $60^\circ$. This is expected, since in such incommensurate structures, with the possibility of Moir$\acute{\text{e}}$-lattice formation, there is no restoring force for an ISM. Furthermore, we observe the ISM even in sufficiently aligned heterobilayers, which are encapsulated in hexagonal Boron nitride. This is particularly relevant for the characterization of high-quality heterostructure devices.

preprint2016arXiv

Loss mechanisms in superconducting thin film microwave resonators

We present a systematic analysis of the internal losses of superconducting coplanar waveguide microwave resonators based on niobium thin films on silicon substrates. In particular, we investigate losses introduced by Nb/Al interfaces in the center conductor, which is important for experiments where Al based Josephson junctions are integrated into Nb based circuits. We find that these interfaces can be a strong source for two-level state (TLS) losses, when the interfaces are not positioned at current nodes of the resonator. In addition to TLS losses, for resonators including Al, quasiparticle losses become relevant above 200 mK. Finally, we investigate how losses generated by eddy currents in conductive material on the backside of the substrate can be minimized by using thick enough substrates or metals with high conductivity on the substrate backside.