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Scott A. Bender

Scott A. Bender contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2020arXiv

Ellipticity and Dissipation Effects in Magnon Spin Valves

We consider alignment-dependent spin and heat transport across a magnon spin valve in the tunneling regime, i.e., a junction consisting of two weakly coupled ferromagnetic insulators. We determine the difference in spin and heat conductance between the parallel and antiparallel configuration of the magnetization direction. The dependence of these conductances on both the Gilbert damping and ellipticity is studied. We find that both magnon ellipticity and dissipation open channels for magnons to tunnel through in the antiparallel configuration. Our results highlight an important difference between electronic and magnon spin transport in spin-valve structures and may be important for the development of devices based on magnetic insulators.

preprint2020arXiv

Spin Transport in Thick Insulating Antiferromagnetic Films

Spin transport of magnonic excitations in uniaxial insulating antiferromagnets (AFs) is investigated. In linear response to spin biasing and a temperature gradient, the spin transport properties of normal-metal--insulating antiferromagnet--normal-metal heterostructures are calculated. We focus on the thick-film regime, where the AF is thicker than the magnon equilibration length. This regime allows the use of a drift-diffusion approach, which is opposed to the thin-film limit considered by Bender {\it et al.} 2017, where a stochastic approach is justified. We obtain the temperature- and thickness-dependence of the structural spin Seebeck coefficient $\mathcal{S}$ and magnon conductance $\mathcal{G}$. In their evaluation we incorporate effects from field- and temperature-dependent spin conserving inter-magnon scattering processes. Furthermore, the interfacial spin transport is studied by evaluating the contact magnon conductances in a microscopic model that accounts for the sub-lattice symmetry breaking at the interface. We find that while inter-magnon scattering does slightly suppress the spin Seebeck effect, transport is generally unaffected, with the relevant spin decay length being determined by non-magnon-conserving processes such as Gilbert damping. In addition, we find that while the structural spin conductance may be enhanced near the spin flip transition, it does not diverge due to spin impedance at the normal metal|magnet interfaces.

preprint2013arXiv

Electronic Pumping of Quasiequilibrium Bose-Einstein Condensed Magnons

We theoretically investigate spin transfer between a system of quasiequilibrated Bose-Einstein condensed magnons in an insulator in direct contact with a conductor. While charge transfer is prohibited across the interface, spin transport arises from the exchange coupling between insulator and conductor spins. In normal insulator phase, spin transport is governed solely by the presence of thermal and spin-diffusive gradients; the presence of Bose-Einstein condensation (BEC), meanwhile, gives rise to a temperature-independent condensate spin current. Depending on the thermodynamic bias of the system, spin may flow in either direction across the interface, engendering the possibility of a dynamical phase transition of magnons. We discuss experimental feasibility of observing a BEC steady state (fomented by a spin Seebeck effect), which is contrasted to the more familiar spin-transfer induced classical instabilities.

preprint2010arXiv

Microwave response of a magnetic single-electron transistor

We consider a single-electron transistor in the form of a ferromagnetic dot in contact with normal-metal and pinned ferromagnetic leads. Microwave-driven precession by the dot induces a pumped electric current. In open circuits, this pumping produces a measurable reverse bias voltage, which can be enhanced and made highly nonlinear by Coulomb blockade in the dot. The dependence of this bias on the power and spectrum of microwave irradiation may be utilized to develop nanoscale microwave detectors analogous to single-electron transistor-based electrostatic sensors and nanoelectromechanical devices.