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Savio Fabretti

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Published work

4 published item(s)

preprint2019arXiv

Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt

The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence for crystalline order or spontaneous magnetization in the yttrium iron garnet layer. Nevertheless, we observe a clear magnetoresistance response with a dependence on the magnetic field orientation characteristic for the SMR. We propose two models for the origin of the SMR response in paramagnetic insulator/Pt heterostructures. The first model describes the SMR of an ensemble of non-interacting paramagnetic moments, while the second model describes the magnetoresistance arising by considering the total net moment. Interestingly, our experimental data are consistently described by the net moment picture, in contrast to the situation in compensated ferrimagnets or antiferromagnets.

preprint2015arXiv

Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe3O4 as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200°C in oxygen atmosphere) during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier.

preprint2014arXiv

Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields

We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T=0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.

preprint2010arXiv

Fabrication of superconducting MgB2 thin films by magnetron co-sputtering on (001) MgO substrates

We fabricated superconducting MgB2 thin films on (001) MgO substrates. The samples were prepared by magnetron rf and dc co-sputtering on heated substrates. They were annealed ex-situ for one hour at temperatures between 450°C and 750°C. We will show that the substrate temperature during the sputtering process and the post annealing temperatures play a crucial role in forming MgB2 superconducting thin films. We achieved a critical onset temperature of 27.1K for a film thickness of 30nm. The crystal structures were measured by x-ray diffraction.