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Researcher profile

Saverio Russo

Saverio Russo contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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Published work

2 published item(s)

preprint2012arXiv

Gate tunable non-linear currents in bilayer graphene diodes

Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and single-gated region. These bilayer graphene pn diodes are characterized by non-linear currents and directional current rectification, and we show the rectified direction of the source-drain voltage can be controlled by using gate voltages. A systematic study of the pn junction characteristics allows to extract a gate-dependent bandgap value which ranges from 0 meV to 130 meV.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Aharonov-Bohm effect in graphene

We investigate experimentally transport through ring-shaped devices etched in graphene and observe clear Aharonov-Bohm conductance oscillations. The temperature dependence of the oscillation amplitude indicates that below 1 K the phase coherence length is comparable to or larger than the size of the ring. An increase in the amplitude is observed at high magnetic field, when the cyclotron diameter becomes comparable to the width of the arms of the ring. By measuring the dependence on gate voltage, we also observe an unexpected linear dependence of the oscillation amplitude on the ring conductance, which had not been reported earlier in rings made using conventional metals or semiconducting heterostructures.

0 citations0 reviewsNo code linkedOpen access