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Satyesh K. Yadav

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2022arXiv

Designing a thermodynamically stable and intrinsically ductile refractory alloy

Developing ductile refractory BCC alloys has remained a challenge. The intrinsic ductility (D) of an alloy is the ratio of surface energy ($γ_s$) and unstable stacking fault energy ($γ_{usfe}$). Lowering the valence electron concentration has been shown to improve the intrinsic ductility of refractory alloys. However, Re has been widely used to ductilize W, contrary to the low valency criteria suggested in the literature. Here we use density functional theory to calculate the enthalpy of formation, $γ_{usfe}$ and $γ_s$ of Group IV, V, VI elements and their 25 equiatomic binary alloys in BCC crystal structure. We found that positive enthalpy leads to a considerable reduction in $γ_{usfe}$ compared to composition averaged value, resulting in improved intrinsic ductility. Enthalpy is maximum at the equiatomic concentrations indicating the highly repulsive interaction between the alloy constituents and vicer-versa. We found that the repulsive interaction between the alloy constituents leads to a reduction in $γ_{usfe}$, making alloys intrinsically ductile.

preprint2020arXiv

Fluorine Intercalated Graphene: Formation of a 2D Spin Lattice through Pseudoatomization

A suspended layer made up of ferromagnetically ordered spins could be created between two mono/multilayer graphene through intercalation. Stability and electronic structure studies show that, when fluorine molecules are intercalated between two mono/multilayer graphene, their bonds get stretched enough ($\sim$ 1.9$-$2.0 Å) to weaken their molecular singlet eigenstate. Geometrically, these stretched molecules form a pseudoatomized fluorine layer by maintaining a van der Waals separation of $\sim$ 2.6 Å from the adjacent carbon layers. As there is a significant charge transfer from the adjacent carbon layers to the fluorine layers, a mixture of triplet and doublet states stabilize to induce local spin-moments at each fluorine sites and in turn form a suspended 2D spin lattice. The spins of this lattice align ferromagnetically with nearest neighbour coupling strength as large as $\sim$ 100 meV. Our finite temperature \textit {ab initio} molecular dynamics study reveals that the intercalated system can be stabilized up to a temperature of 100 K with an average magnetic moment of $\sim$ 0.6 $μ_{B}$/F. However, if the graphene layers can be held fixed, the room temperature stability of such a system is feasible.

preprint2015arXiv

Band-gap and Band-edge Engineering of Multicomponent Garnet Scintillators: A First-principles Study

Complex doping schemes in RE$_3$Al$_5$O$_{12}$ (RE=rare earth element) garnet compounds have recently led to pronounced improvements in scintillator performance. Specifically, by admixing lutetium and yttrium aluminate garnets with gallium and gadolinium, the band-gap was altered in a manner that facilitated the removal of deleterious electron trapping associated with cation antisite defects. Here, we expand upon this initial work to systematically investigate the effect of substitutional admixing on the energy levels of band edges. Density functional theory was used to survey potential admixing candidates that modify either the conduction band minimum (CBM) or valence band maximum (VBM). We considered two sets of compositions based on Lu$_3$B$_5$O$_{12}$ where B = Al, Ga, In, As, and Sb; and RE$_3$Al$_5$O$_{12}$, where RE = Lu, Gd, Dy, and Er. We found that admixing with various RE cations does not appreciably effect the band gap or band edges. In contrast, substituting Al with cations of dissimilar ionic radii has a profound impact on the band structure. We further show that certain dopants can be used to selectively modify only the CBM or the VBM. Specifically, Ga and In decrease the band gap by lowering the CBM, while As and Sb decrease the band gap by raising the VBM. These results demonstrate a powerful approach to quickly screen the impact of dopants on the electronic structure of scintillator compounds, identifying those dopants which alter the band edges in very specific ways to eliminate both electron and hole traps responsible for performance limitations. This approach should be broadly applicable for the optimization of electronic and optical performance for a wide range of compounds by tuning the VBM and CBM.