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Sangjun Oh

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Published work

2 published item(s)

preprint2016arXiv

Beyond Bean's critical state model: On the origin of paramagnetic Meissner effect

Solving phenomenological macroscopic equations instead of microscopic Ginzburg-Landau equations for superconductors is much easier and can be advantageous in a variety of applications. However, till now, only Bean's critical state model is available for the description of irreversible properties. Here we propose a plausible overall macroscopic model for both reversible and irreversible properties, combining London theory and Bean's model together based on superposition principle. First, a simple case where there is no pinning is discussed, from which a microscopic basis for Bean's model is explored. It is shown that a new concept of 'flux share' is needed when the field is increased above the lower critical field. A portion of magnetic flux is completely shielded, named as 'Meissner share' and the rest penetrates through vortices, named as 'vortices share'. We argue that the flux shares are irreversible if there is pinning. It is shown that the irreversible flux shares can be the reason for observed peculiar reversible magnetization behavior near zero field. The overall macroscopic model seems to be valuable for the analysis of fundamental physical properties as well. As an example, it is shown the origin of paramagnetic Meissner effect can be explained by the phenomenological macroscopic model.

preprint2010arXiv

Perfect Domain-Lattice Matching Between MgB2 and Al2O3: Single-Crystal MgB2 Thin Films Grown on Sapphire

We have found that single-crystal films can be grown on (0001) Al2O3 substrates through the golden relation of a perfect lattice-matching ratio between the a-axis lattice constants of MgB2 and Al2O3. Selected area electron diffraction patterns evidently indicate hexagonal MgB2 film with a 30 degrees in-plane rotation with respect to the Al2O3 substrate. The films grown on Al2O3 show a zero-resistance transition temperature of 39.6 K with a transition width of 0.1 K. The critical current density at zero field is comparable to the depairing critical current density and rapidly decreases with increasing applied field due to the lack of pinning sites, as observed for high-quality MgB2 single crystals.