Source author record

Sanghamitra Neogi

Sanghamitra Neogi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

4works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2019arXiv

Anisotropic In-Plane Phonon Transport in Ultrathin Silicon Membranes Guided by Nano-Surface-Resonators

Anisotropic phonon transport along different lattice directions of two-dimensional (2D) materials has been observed, however, the effect decreases with increasing the thickness beyond a few atomic layers. Here we establish a novel mechanism to induce anisotropic phonon transport in quasi-2D materials with isotropic symmetry. The phonon propagation is guided by resonance hybridization with surface nanostructures. We demonstrate that the thermal conductivity of 3 nm-thick silicon membrane with surface nanofins is greater by $\sim50\%$ parallel to the fins than that perpendicular to the fins.

preprint2019arXiv

Modulation of Semiconductor Superlattice Thermopower Through Symmetry and Strain

In doped semiconductors and metals, the thermopower decreases with increasing carrier concentration, in agreement with the Pisarenko relation. Here, we demonstrate a new strain engineering approach to increase the thermopower of [001] Si/Ge superlattices (SLs) beyond this relation. Using two independent theoretical modeling approaches, we show that new bands form due to the structural symmetry, and, the SL bands are highly tunable with epitaxial substrate strain. The band shifts lead to a modulated thermopower, with a peak $\sim$5-fold enhancement in strained Si/Ge SLs in the high doping regime.

preprint2019arXiv

Theoretical Prediction of Enhanced Thermopower in n-doped Si/Ge Superlattices using Effective Mass Approximation

We analyze the cross-plane miniband transport in n-doped [001] silicon (Si)/germanium (Ge) superlattices using an effective mass approximation (EMA) approach that correctly accounts for the indirect nature of the Si and Ge band gaps. Direct-gap based EMA has been employed so far to investigate the electronic properties of these superlattices, that does not accurately predict transport properties. We use the Boltzmann transport equation framework in combination with the EMA band analysis, and predict that significant improvement of the thermopower of n-doped Si/Ge superlattices can be achieved by controlling the lattice strain environment in these heterostructured materials. We illustrate that a remarkable degree of tunability in the Seebeck coefficient can be attained by growing the superlattices on various substrates, and varying the periods, and the compositions. Our calculations show up to ~3.2-fold Seebeck enhancement in Si/Ge [001] superlattices over bulk silicon, in the high-doping regime, breaking the Pisarenko relation. The thermopower modulations lead to an increase of power factor by up to 20%. Our approach is generically applicable to other superlattice systems, e.g., to investigate dimensional effects on electronic transport in two-dimensional nanowire and three dimensional nanodot superlattices. A material with high S potentially improves the energy conversion efficiency of thermoelectric applications and additionally, is highly valuable in various Seebeck metrology techniques including thermal, flow, radiation, and chemical sensing applications. We anticipate that the ideas presented here will have a strong impact in controlling electronic transport in various thermoelectric, opto-electronic, and quantum-enhanced materials applications.

preprint2016arXiv

Lattice dynamics model calculation of Kapitza conductance at solid-fluid interfaces

Existing theoretical models of the interfacial thermal conductance, i.e., Kapitza conductance, of insulating solid-fluid interfaces only consider bulk properties, e.g., acoustic mismatch model and diffuse mismatch model. In this work, we propose a classical lattice dynamical model calculation of the Kapitza conductance, thereby incorporating interfacial structural details. In our model, we assume that heat is mostly carried by phonons in the solid, and that sound waves carry diffusive heat from the interface into the bulk of the liquid, where both longitudinal and transverse sound waves are considered. Sound wave dispersion is calculated from the fluid pair distribution function, evaluated using approximate integral equation theories (i.e., Percus-Yevick, Hypernetted-chain approximation). The Kapitza conductance of the solid-fluid interface is obtained from the phonon transmission coefficient at the interface. We determine the interfacial phonon transmission coefficient by solving the coupled equations of motion for the interfacial solid and fluid atoms. As an illustrative example, we derive the Kapitza conductance of solid argon-fluid neon interface, with pair-wise Lennard-Jones interactions.