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Sangeeta Sahoo

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cond-mat.supr-con cond-mat.mes-hall

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preprint2016arXiv

Ultrasensitive interplay between ferromagnetism and superconductivity in NbGd composite thin films

A model binary hybrid system composed of a randomly distributed rare-earth ferromagnetic (Gd) part embedded in an s-wave superconducting (Nb) matrix is being manufactured to study the interplay between competing superconducting and ferromagnetic order parameters. The normal metallic to superconducting phase transition appears to be very sensitive to the magnetic counterpart and the modulation of the superconducing properties follow closely to the Abrikosov-Gorkov (AG) theory of magnetic impurity induced pair breaking mechanism. A critical concentration of Gd is obtained for the studied NbGd based composite films (CFs) above which superconductivity disappears. Besides, a magnetic ordering resembling the paramagnetic Meissner effect (PME) appears in DC magnetization measurements at temperatures close to the superconducting transition temperature. The positive magnetization related to the PME emerges upon doping Nb with Gd. The temperature dependent resistance measurements evolve in a similar fashion with the concentration of Gd as that with an external magnetic field and in both the cases, the transition curves accompany several intermediate features indicating the traces of magnetism originated either from Gd or from the external field. Finally, the signatures of magnetism appear evidently in the magnetization and transport measurements for the CFs with very low (less than 1 at. %) doping of Gd.

preprint2015arXiv

Tailoring phase slip events through magnetic doping in superconductor-ferromagnet composite films

The interplay between superconductivity (SC) and ferromagnetism (FM) when embedded together has attracted unprecedented research interest due to very rare coexistence of these two phenomena. The focus has been mainly put into the proximity induced effects like, coexistence of magnetism and superconductivity, higher critical current, triplet superconductivity etc. However, very little attention has been paid experimentally to the role of magnetic constituent on triggering phase slip processes in the composite films (CFs). We demonstrate that less than 1 at. % of magnetic contribution in the CFs can initiate phase slip events efficiently. Due to advanced state-of-the-art fabrication techniques, phase slip based studies have been concentrated mainly on superconducting nanostructures. Here, we employ wide mesoscopic NbGd based CFs to study the phase slip processes. Low temperature current-voltage characteristics (IVCs) of CFs show stair-like features originated through phase slip events and are absent in pure SC films. Depending on the bias current and temperature, distinct regions, dominated by Abrikosov type vortex-antivortex (v-av) pairs and phase slip events, are observed. The results presented here open a new way to study the phase slip mechanism, its interaction with v-av pairs in two dimensions and hence can be useful for future photonic and metrological applications

preprint2005arXiv

Electric Field Control of Spin Transport

Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are separated by a thin tunneling barrier. In such devices, R depends on the orientation of the magnetisation of the electrodes. It is usually larger in the antiparallel than in the parallel configuration. The relative difference of R, the so-called magneto-resistance (MR), is then positive. Common devices, such as the giant magneto-resistance sensor used in reading heads of hard disks, are based on this phenomenon. The MR may become anomalous (negative), if the transmission probability of electrons through the device is spin or energy dependent. This offers a route to the realisation of gate-tunable MR devices, because transmission probabilities can readily be tuned in many devices with an electrical gate signal. Such devices have, however, been elusive so far. We report here on a pronounced gate-field controlled MR in devices made from carbon nanotubes with ferromagnetic contacts. Both the amplitude and the sign of the MR are tunable with the gate voltage in a predictable manner. We emphasise that this spin-field effect is not restricted to carbon nanotubes but constitutes a generic effect which can in principle be exploited in all resonant tunneling devices.